Enhanced carrier collection in p-Ni1 - XO:Li/n-Si heterojunction solar cells using LiF/Al electrodes

Feng Hao Hsu; Na Fu Wang; Yu Zen Tsai; Chung Yi Wu; Yu Song Cheng; Ming Hao Chien; Mau Phon Houng

doi:10.1016/j.tsf.2014.11.025

Enhanced carrier collection in p-Ni_{1 - X}O:Li/n-Si heterojunction solar cells using LiF/Al electrodes

Feng Hao Hsu
, Na Fu Wang
, Yu Zen Tsai
, Chung Yi Wu
, Yu Song Cheng
, Ming Hao Chien
, Mau Phon Houng

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

This study confirms that a LiF/Al (LiF thickness = 15 Å) stack is an efficient Ohmic contact method for use in p-Ni_{1 - x}O:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31%, which was 2.1% greater compared with that of Al-only electrode cell. Temperature-dependent current-voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation.

Original language	English
Pages (from-to)	159-163
Number of pages	5
Journal	Thin Solid Films
Volume	573
DOIs	https://doi.org/10.1016/j.tsf.2014.11.025
Publication status	Published - 2014 Dec 31

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2014.11.025

Cite this

@article{10dd48c802d5486e9330c6426e5c19c1,

title = "Enhanced carrier collection in p-Ni1 - XO:Li/n-Si heterojunction solar cells using LiF/Al electrodes",

abstract = "This study confirms that a LiF/Al (LiF thickness = 15 {\AA}) stack is an efficient Ohmic contact method for use in p-Ni1 - xO:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31\%, which was 2.1\% greater compared with that of Al-only electrode cell. Temperature-dependent current-voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation.",

author = "Hsu, \{Feng Hao\} and Wang, \{Na Fu\} and Tsai, \{Yu Zen\} and Wu, \{Chung Yi\} and Cheng, \{Yu Song\} and Chien, \{Ming Hao\} and Houng, \{Mau Phon\}",

note = "Funding Information: The authors gratefully acknowledge the financial support of the National Science Council of Taiwan, ROC (Grant Nos. NSC-100-2221-E-006-043-MY2 and MOST 103-2221-E-230-019 ). Publisher Copyright: {\textcopyright} 2014 Elsevier B.V. All rights reserved.",

year = "2014",

month = dec,

day = "31",

doi = "10.1016/j.tsf.2014.11.025",

language = "English",

volume = "573",

pages = "159--163",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier BV",

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TY - JOUR

T1 - Enhanced carrier collection in p-Ni1 - XO:Li/n-Si heterojunction solar cells using LiF/Al electrodes

AU - Hsu, Feng Hao

AU - Wang, Na Fu

AU - Tsai, Yu Zen

AU - Wu, Chung Yi

AU - Cheng, Yu Song

AU - Chien, Ming Hao

AU - Houng, Mau Phon

N1 - Funding Information: The authors gratefully acknowledge the financial support of the National Science Council of Taiwan, ROC (Grant Nos. NSC-100-2221-E-006-043-MY2 and MOST 103-2221-E-230-019 ). Publisher Copyright: © 2014 Elsevier B.V. All rights reserved.

PY - 2014/12/31

Y1 - 2014/12/31

N2 - This study confirms that a LiF/Al (LiF thickness = 15 Å) stack is an efficient Ohmic contact method for use in p-Ni1 - xO:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31%, which was 2.1% greater compared with that of Al-only electrode cell. Temperature-dependent current-voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation.

AB - This study confirms that a LiF/Al (LiF thickness = 15 Å) stack is an efficient Ohmic contact method for use in p-Ni1 - xO:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31%, which was 2.1% greater compared with that of Al-only electrode cell. Temperature-dependent current-voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation.

UR - https://www.scopus.com/pages/publications/84915813595

UR - https://www.scopus.com/pages/publications/84915813595#tab=citedBy

U2 - 10.1016/j.tsf.2014.11.025

DO - 10.1016/j.tsf.2014.11.025

M3 - Article

AN - SCOPUS:84915813595

SN - 0040-6090

VL - 573

SP - 159

EP - 163

JO - Thin Solid Films

JF - Thin Solid Films

ER -