Enhanced charge carrier mobility in two-dimensional high dielectric molybdenum oxide

Sivacarendran Balendhran, Junkai Deng, Jian Zhen Ou, Sumeet Walia, James Scott, Jianshi Tang, Kang L. Wang, Matthew R. Field, Salvy Russo, Serge Zhuiykov, Michael S. Strano, Nikhil Medhekar, Sharath Sriram, Madhu Bhaskaran, Kourosh Kalantar-Zadeh

Research output: Contribution to journalArticlepeer-review

258 Citations (Scopus)


We demonstrate that the energy bandgap of layered, high-dielectric α-MoO3 can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO3 of ∼11 nm thickness and carrier mobilities larger than 1100 cm2 V-1 s-1 are obtained.

Original languageEnglish
Pages (from-to)109-114
Number of pages6
JournalAdvanced Materials
Issue number1
Publication statusPublished - 2013 Jan 4

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Enhanced charge carrier mobility in two-dimensional high dielectric molybdenum oxide'. Together they form a unique fingerprint.

Cite this