Enhanced conductance fluctuation by quantum confinement effect in graphene nanoribbons

Guangyu Xu; Carlos M. Torres; Emil B. Song; Jianshi Tang; Jingwei Bai; Xiangfeng Duan; Yuegang Zhang; Kang L. Wang

doi:10.1021/nl1025979

Enhanced conductance fluctuation by quantum confinement effect in graphene nanoribbons

Guangyu Xu, Carlos M. Torres, Emil B. Song, Jianshi Tang, Jingwei Bai, Xiangfeng Duan, Yuegang Zhang, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Conductance fluctuation is usually unavoidable in graphene nanoribbons (GNR) due to the presence of disorder along its edges. By measuring the low-frequency noise in GNR devices, we find that the conductance fluctuation is strongly correlated with the density-of-states of GNR. In single-layer GNR, the gate-dependence of noise shows peaks whose positions quantitatively match the subband positions in the band structures of GNR. This correlation provides a robust mechanism to electrically probe the band structure of GNR, especially when the subband structures are smeared out in conductance measurement.

Original language	English
Pages (from-to)	4590-4594
Number of pages	5
Journal	Nano letters
Volume	10
Issue number	11
DOIs	https://doi.org/10.1021/nl1025979
Publication status	Published - 2010 Nov 10

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl1025979

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title = "Enhanced conductance fluctuation by quantum confinement effect in graphene nanoribbons",

abstract = "Conductance fluctuation is usually unavoidable in graphene nanoribbons (GNR) due to the presence of disorder along its edges. By measuring the low-frequency noise in GNR devices, we find that the conductance fluctuation is strongly correlated with the density-of-states of GNR. In single-layer GNR, the gate-dependence of noise shows peaks whose positions quantitatively match the subband positions in the band structures of GNR. This correlation provides a robust mechanism to electrically probe the band structure of GNR, especially when the subband structures are smeared out in conductance measurement.",

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doi = "10.1021/nl1025979",

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T1 - Enhanced conductance fluctuation by quantum confinement effect in graphene nanoribbons

AU - Xu, Guangyu

AU - Torres, Carlos M.

AU - Song, Emil B.

AU - Tang, Jianshi

AU - Bai, Jingwei

AU - Duan, Xiangfeng

AU - Zhang, Yuegang

AU - Wang, Kang L.

PY - 2010/11/10

Y1 - 2010/11/10

N2 - Conductance fluctuation is usually unavoidable in graphene nanoribbons (GNR) due to the presence of disorder along its edges. By measuring the low-frequency noise in GNR devices, we find that the conductance fluctuation is strongly correlated with the density-of-states of GNR. In single-layer GNR, the gate-dependence of noise shows peaks whose positions quantitatively match the subband positions in the band structures of GNR. This correlation provides a robust mechanism to electrically probe the band structure of GNR, especially when the subband structures are smeared out in conductance measurement.

AB - Conductance fluctuation is usually unavoidable in graphene nanoribbons (GNR) due to the presence of disorder along its edges. By measuring the low-frequency noise in GNR devices, we find that the conductance fluctuation is strongly correlated with the density-of-states of GNR. In single-layer GNR, the gate-dependence of noise shows peaks whose positions quantitatively match the subband positions in the band structures of GNR. This correlation provides a robust mechanism to electrically probe the band structure of GNR, especially when the subband structures are smeared out in conductance measurement.

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JO - Nano Letters

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Enhanced conductance fluctuation by quantum confinement effect in graphene nanoribbons

Abstract

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