Enhanced current driving capability GaAs/graded InxGa1-xAs/GaAs high electron mobility transistor

R. T. Hsu; H. M. Shieh; W. C. Hsu; T. S. Wu

doi:10.1016/0038-1101(93)90194-U

Enhanced current driving capability GaAs/graded In_xGa_1-xAs/GaAs high electron mobility transistor

R. T. Hsu, H. M. Shieh, W. C. Hsu, T. S. Wu

Research output: Contribution to journal › Article › peer-review

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Abstract

The δ- and homogeneously-doped high electron mobility transistor (HEMTs) employing a graded In_xGa_1-xAs quantum well as the active channel grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) were studied qualitatively. The proposed graded In_xGa_1-xAs pseudomorphic structure manifests higher saturation current densities and transconductances which may be mainly attributed to its superior confinement and lower interface roughness scattering at the GaAs/In_xGa_1-xAs interface.

Original language	English
Pages (from-to)	1143-1146
Number of pages	4
Journal	Solid State Electronics
Volume	36
Issue number	8
DOIs	https://doi.org/10.1016/0038-1101(93)90194-U
Publication status	Published - 1993 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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@article{8fc45c589f31431fafb5a73f79faaf0e,

title = "Enhanced current driving capability GaAs/graded InxGa1-xAs/GaAs high electron mobility transistor",

abstract = "The δ- and homogeneously-doped high electron mobility transistor (HEMTs) employing a graded InxGa1-xAs quantum well as the active channel grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) were studied qualitatively. The proposed graded InxGa1-xAs pseudomorphic structure manifests higher saturation current densities and transconductances which may be mainly attributed to its superior confinement and lower interface roughness scattering at the GaAs/InxGa1-xAs interface.",

author = "Hsu, {R. T.} and Shieh, {H. M.} and Hsu, {W. C.} and Wu, {T. S.}",

note = "Funding Information: Acknowledgemenr-This work was supported by the National Science Council, Republic of China, under contract No. NSC 80-0404-E-006-57. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1993",

month = aug,

doi = "10.1016/0038-1101(93)90194-U",

language = "English",

volume = "36",

pages = "1143--1146",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "8",

}

TY - JOUR

T1 - Enhanced current driving capability GaAs/graded InxGa1-xAs/GaAs high electron mobility transistor

AU - Hsu, R. T.

AU - Shieh, H. M.

AU - Hsu, W. C.

AU - Wu, T. S.

N1 - Funding Information: Acknowledgemenr-This work was supported by the National Science Council, Republic of China, under contract No. NSC 80-0404-E-006-57. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1993/8

Y1 - 1993/8

N2 - The δ- and homogeneously-doped high electron mobility transistor (HEMTs) employing a graded InxGa1-xAs quantum well as the active channel grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) were studied qualitatively. The proposed graded InxGa1-xAs pseudomorphic structure manifests higher saturation current densities and transconductances which may be mainly attributed to its superior confinement and lower interface roughness scattering at the GaAs/InxGa1-xAs interface.

AB - The δ- and homogeneously-doped high electron mobility transistor (HEMTs) employing a graded InxGa1-xAs quantum well as the active channel grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) were studied qualitatively. The proposed graded InxGa1-xAs pseudomorphic structure manifests higher saturation current densities and transconductances which may be mainly attributed to its superior confinement and lower interface roughness scattering at the GaAs/InxGa1-xAs interface.

UR - http://www.scopus.com/inward/record.url?scp=0027643619&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027643619&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(93)90194-U

DO - 10.1016/0038-1101(93)90194-U

M3 - Article

AN - SCOPUS:0027643619

SN - 0038-1101

VL - 36

SP - 1143

EP - 1146

JO - Solid State Electronics

JF - Solid State Electronics

IS - 8

ER -

Enhanced current driving capability GaAs/graded In_xGa_1-xAs/GaAs high electron mobility transistor

Abstract

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