Enhanced field emission of well-aligned ZnO nanowire arrays illuminated by UV

Chih Han Chen; Shoou Jinn Chang; Sheng Po Chang; Yao Ching Tsai; I. Cherng Chen; Ting Jen Hsueh; Cheng Liang Hsu

doi:10.1016/j.cplett.2010.03.033

Enhanced field emission of well-aligned ZnO nanowire arrays illuminated by UV

Chih Han Chen
, Shoou Jinn Chang
, Sheng Po Chang
, Yao Ching Tsai
, I. Cherng Chen
, Ting Jen Hsueh
, Cheng Liang Hsu

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

Vertical zinc oxide nanowires, used as electron emitters, were synthesized on ZnO:Ga/glass substrate by a vapor-liquid-solid process without a catalyst. The nanowires, 5 μm long and 50-250 nm in diameter, were grown with a preferred (0 0 2) orientation and a small XRD full-width at half-maximum intensity. Illumination of ZnO nanowires by UV improved their field emission attributes, reducing their turn-on electric field to 2.1 V/μm at a current density of l μA/cm². This phenomenon is attributed to the generation of a large number of hole-electron pairs by UV illumination.

Original language	English
Pages (from-to)	176-179
Number of pages	4
Journal	Chemical Physics Letters
Volume	490
Issue number	4-6
DOIs	https://doi.org/10.1016/j.cplett.2010.03.033
Publication status	Published - 2010 Apr 26

All Science Journal Classification (ASJC) codes

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1016/j.cplett.2010.03.033

Cite this

@article{66fbf69f157349889e5701bf0e4ce756,

title = "Enhanced field emission of well-aligned ZnO nanowire arrays illuminated by UV",

abstract = "Vertical zinc oxide nanowires, used as electron emitters, were synthesized on ZnO:Ga/glass substrate by a vapor-liquid-solid process without a catalyst. The nanowires, 5 μm long and 50-250 nm in diameter, were grown with a preferred (0 0 2) orientation and a small XRD full-width at half-maximum intensity. Illumination of ZnO nanowires by UV improved their field emission attributes, reducing their turn-on electric field to 2.1 V/μm at a current density of l μA/cm2. This phenomenon is attributed to the generation of a large number of hole-electron pairs by UV illumination.",

author = "Chen, \{Chih Han\} and Chang, \{Shoou Jinn\} and Chang, \{Sheng Po\} and Tsai, \{Yao Ching\} and Chen, \{I. Cherng\} and Hsueh, \{Ting Jen\} and Hsu, \{Cheng Liang\}",

note = "Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan , for financially supporting this research under Contract No. NSC 98-2221-E-024 -001 . The authors would like to thank the Bureau of Energy, Ministry of Economic Affairs of R.O.C. for financially supporting this research under Contract No. 98-D0204-6 and the LED Lighting and Research Center, NCKU for the assistance regarding measurements.",

year = "2010",

month = apr,

day = "26",

doi = "10.1016/j.cplett.2010.03.033",

language = "English",

volume = "490",

pages = "176--179",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier BV",

number = "4-6",

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TY - JOUR

T1 - Enhanced field emission of well-aligned ZnO nanowire arrays illuminated by UV

AU - Chen, Chih Han

AU - Chang, Shoou Jinn

AU - Chang, Sheng Po

AU - Tsai, Yao Ching

AU - Chen, I. Cherng

AU - Hsueh, Ting Jen

AU - Hsu, Cheng Liang

N1 - Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan , for financially supporting this research under Contract No. NSC 98-2221-E-024 -001 . The authors would like to thank the Bureau of Energy, Ministry of Economic Affairs of R.O.C. for financially supporting this research under Contract No. 98-D0204-6 and the LED Lighting and Research Center, NCKU for the assistance regarding measurements.

PY - 2010/4/26

Y1 - 2010/4/26

N2 - Vertical zinc oxide nanowires, used as electron emitters, were synthesized on ZnO:Ga/glass substrate by a vapor-liquid-solid process without a catalyst. The nanowires, 5 μm long and 50-250 nm in diameter, were grown with a preferred (0 0 2) orientation and a small XRD full-width at half-maximum intensity. Illumination of ZnO nanowires by UV improved their field emission attributes, reducing their turn-on electric field to 2.1 V/μm at a current density of l μA/cm2. This phenomenon is attributed to the generation of a large number of hole-electron pairs by UV illumination.

AB - Vertical zinc oxide nanowires, used as electron emitters, were synthesized on ZnO:Ga/glass substrate by a vapor-liquid-solid process without a catalyst. The nanowires, 5 μm long and 50-250 nm in diameter, were grown with a preferred (0 0 2) orientation and a small XRD full-width at half-maximum intensity. Illumination of ZnO nanowires by UV improved their field emission attributes, reducing their turn-on electric field to 2.1 V/μm at a current density of l μA/cm2. This phenomenon is attributed to the generation of a large number of hole-electron pairs by UV illumination.

UR - https://www.scopus.com/pages/publications/77950951834

UR - https://www.scopus.com/pages/publications/77950951834#tab=citedBy

U2 - 10.1016/j.cplett.2010.03.033

DO - 10.1016/j.cplett.2010.03.033

M3 - Article

AN - SCOPUS:77950951834

SN - 0009-2614

VL - 490

SP - 176

EP - 179

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 4-6

ER -

Enhanced field emission of well-aligned ZnO nanowire arrays illuminated by UV

Abstract

All Science Journal Classification (ASJC) codes

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