Enhanced field emitter base on indium-doped ZnO nanostructures by aqueous solution

Y. H. Liu, S. J. Chang, S. J. Young

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


In this study, indium doped ZnO (IZO) nanostructures were fabricated successfully on a glass substrate. It was found that the IZO nanostructures grown at room temperature were structurally uniform and well oriented with pure wurtzite structure. The composition of the doped zinc oxide (ZnO) nanostructures was confirmed by X-ray diffraction (XRD) and energy dispersive X-ray. The turn-on fields of ZnO and IZO nanostructures were 4.21 and 3.86 V/μm, and field enhancement factors (β) were 2695 and 5015, respectively. These results show that the field emission properties of the IZO nanostructures are better than those of ZnO nanostructures.

Original languageEnglish
Pages (from-to)R203-R205
JournalECS Journal of Solid State Science and Technology
Issue number12
Publication statusPublished - 2016

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials


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