Enhanced hole injections in organic light-emitting devices by depositing nickel oxide on indium tin oxide anode

I. Min Chan; Tsung Yi Hsu; Franklin C. Hong

doi:10.1063/1.1505112

Enhanced hole injections in organic light-emitting devices by depositing nickel oxide on indium tin oxide anode

I. Min Chan, Tsung Yi Hsu, Franklin C. Hong

Department of Chemical Engineering

Research output: Contribution to journal › Article › peer-review

224 Citations (Scopus)

Abstract

An ultrathin layer of nickel oxide (NiO) was deposited on the indium tin oxide (ITO) anode to enhance the hole injections in organic light-emitting diode (OLED) devices. A very low turn-on voltage (3 V) was actually observed for the device with NiO on ITO. The enhancement of hole injections by depositing NiO on the ITO anode was further verified by the hole-only devices. The excellent hole-injection ability of NiO was also demonstrated by devising a device with patterned NiO on the ITO anode. Our results suggest that the NiO/ITO anode is an excellent choice to enhance hole injections of OLED devices.

Original language	English
Pages (from-to)	1899-1901
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	10
DOIs	https://doi.org/10.1063/1.1505112
Publication status	Published - 2002 Sept 2

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1505112

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abstract = "An ultrathin layer of nickel oxide (NiO) was deposited on the indium tin oxide (ITO) anode to enhance the hole injections in organic light-emitting diode (OLED) devices. A very low turn-on voltage (3 V) was actually observed for the device with NiO on ITO. The enhancement of hole injections by depositing NiO on the ITO anode was further verified by the hole-only devices. The excellent hole-injection ability of NiO was also demonstrated by devising a device with patterned NiO on the ITO anode. Our results suggest that the NiO/ITO anode is an excellent choice to enhance hole injections of OLED devices.",

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N2 - An ultrathin layer of nickel oxide (NiO) was deposited on the indium tin oxide (ITO) anode to enhance the hole injections in organic light-emitting diode (OLED) devices. A very low turn-on voltage (3 V) was actually observed for the device with NiO on ITO. The enhancement of hole injections by depositing NiO on the ITO anode was further verified by the hole-only devices. The excellent hole-injection ability of NiO was also demonstrated by devising a device with patterned NiO on the ITO anode. Our results suggest that the NiO/ITO anode is an excellent choice to enhance hole injections of OLED devices.

AB - An ultrathin layer of nickel oxide (NiO) was deposited on the indium tin oxide (ITO) anode to enhance the hole injections in organic light-emitting diode (OLED) devices. A very low turn-on voltage (3 V) was actually observed for the device with NiO on ITO. The enhancement of hole injections by depositing NiO on the ITO anode was further verified by the hole-only devices. The excellent hole-injection ability of NiO was also demonstrated by devising a device with patterned NiO on the ITO anode. Our results suggest that the NiO/ITO anode is an excellent choice to enhance hole injections of OLED devices.

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Enhanced hole injections in organic light-emitting devices by depositing nickel oxide on indium tin oxide anode

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