Enhanced hot-carrier induced degradation in pMOSFETs stressed under high gate voltage

Jone-Fang Chen, Chih Pin Tsao, T. C. Ong

Research output: Contribution to journalConference articlepeer-review

Abstract

Enhanced hot-carrier induced drain current degradation under high gate voltage stress is observed in pMOSFETs. Electron tunneling from the gate plus Auger recombination assisted hot-hole energy gain process is responsible for this phenomenon. This enhancement in drain current degradation is more severe for devices with thinner gate oxide, or devices operated under higher temperature or lower drain voltage.

Original languageEnglish
Pages (from-to)230-233
Number of pages4
JournalBiennial University/Government/Industry Microelectronics Symposium - Proceedings
Publication statusPublished - 2003 Sep 1
Event15th Biennial University/Government/Industry Microelectronics Symposium - Boise, ID, United States
Duration: 2003 Jun 302003 Jul 2

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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