Enhanced hot-carrier induced drain current degradation under high gate voltage stress is observed in pMOSFETs. Electron tunneling from the gate plus Auger recombination assisted hot-hole energy gain process is responsible for this phenomenon. This enhancement in drain current degradation is more severe for devices with thinner gate oxide, or devices operated under higher temperature or lower drain voltage.
|Number of pages||4|
|Journal||Biennial University/Government/Industry Microelectronics Symposium - Proceedings|
|Publication status||Published - 2003 Sep 1|
|Event||15th Biennial University/Government/Industry Microelectronics Symposium - Boise, ID, United States|
Duration: 2003 Jun 30 → 2003 Jul 2
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering