Enhanced hot-carrier induced current degradation in narrow channel PMOSFET's with shallow trench isolation structure is observed. This phenomenon is not due to the increase in gate current, but the result of the increase in the electron trapping efficiency of the gate oxide. Mechanical stress may be responsible for the enhanced electron trapping efficiency.
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|Publication status||Published - 1998 Sept|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering