Enhanced hot-carrier induced degradation in shallow trench isolated narrow channel PMOSFET's

Jone-Fang Chen, Kazunari Ishimaru, Chenming Hu

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Enhanced hot-carrier induced current degradation in narrow channel PMOSFET's with shallow trench isolation structure is observed. This phenomenon is not due to the increase in gate current, but the result of the increase in the electron trapping efficiency of the gate oxide. Mechanical stress may be responsible for the enhanced electron trapping efficiency.

Original languageEnglish
Pages (from-to)332-334
Number of pages3
JournalIEEE Electron Device Letters
Volume19
Issue number9
DOIs
Publication statusPublished - 1998 Sep 1

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Hot carriers
Degradation
Electrons
Induced currents
Oxides

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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abstract = "Enhanced hot-carrier induced current degradation in narrow channel PMOSFET's with shallow trench isolation structure is observed. This phenomenon is not due to the increase in gate current, but the result of the increase in the electron trapping efficiency of the gate oxide. Mechanical stress may be responsible for the enhanced electron trapping efficiency.",
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Enhanced hot-carrier induced degradation in shallow trench isolated narrow channel PMOSFET's. / Chen, Jone-Fang; Ishimaru, Kazunari; Hu, Chenming.

In: IEEE Electron Device Letters, Vol. 19, No. 9, 01.09.1998, p. 332-334.

Research output: Contribution to journalArticle

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