Enhanced hot-carrier induced degradation in shallow trench isolated narrow channel PMOSFET's

Jone F. Chen; Kazunari Ishimaru; Chenming Hu

doi:10.1109/55.709632

Enhanced hot-carrier induced degradation in shallow trench isolated narrow channel PMOSFET's

Jone F. Chen, Kazunari Ishimaru, Chenming Hu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Enhanced hot-carrier induced current degradation in narrow channel PMOSFET's with shallow trench isolation structure is observed. This phenomenon is not due to the increase in gate current, but the result of the increase in the electron trapping efficiency of the gate oxide. Mechanical stress may be responsible for the enhanced electron trapping efficiency.

Original language	English
Pages (from-to)	332-334
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	19
Issue number	9
DOIs	https://doi.org/10.1109/55.709632
Publication status	Published - 1998 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.709632

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title = "Enhanced hot-carrier induced degradation in shallow trench isolated narrow channel PMOSFET's",

abstract = "Enhanced hot-carrier induced current degradation in narrow channel PMOSFET's with shallow trench isolation structure is observed. This phenomenon is not due to the increase in gate current, but the result of the increase in the electron trapping efficiency of the gate oxide. Mechanical stress may be responsible for the enhanced electron trapping efficiency.",

author = "Chen, {Jone F.} and Kazunari Ishimaru and Chenming Hu",

note = "Funding Information: Manuscript received April 2, 1998; revised June 9, 1998. This work was supported in part by the Office of Naval Research, Contract FDN00014-96-1-0369. J. F. Chen and C. Hu are with the Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720 USA. K. Ishimaru is with the Toshiba Corporation, Yokohama 235, Japan. Publisher Item Identifier S 0741-3106(98)06629-4.",

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AU - Chen, Jone F.

AU - Ishimaru, Kazunari

AU - Hu, Chenming

N1 - Funding Information: Manuscript received April 2, 1998; revised June 9, 1998. This work was supported in part by the Office of Naval Research, Contract FDN00014-96-1-0369. J. F. Chen and C. Hu are with the Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720 USA. K. Ishimaru is with the Toshiba Corporation, Yokohama 235, Japan. Publisher Item Identifier S 0741-3106(98)06629-4.

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Y1 - 1998/9

N2 - Enhanced hot-carrier induced current degradation in narrow channel PMOSFET's with shallow trench isolation structure is observed. This phenomenon is not due to the increase in gate current, but the result of the increase in the electron trapping efficiency of the gate oxide. Mechanical stress may be responsible for the enhanced electron trapping efficiency.

AB - Enhanced hot-carrier induced current degradation in narrow channel PMOSFET's with shallow trench isolation structure is observed. This phenomenon is not due to the increase in gate current, but the result of the increase in the electron trapping efficiency of the gate oxide. Mechanical stress may be responsible for the enhanced electron trapping efficiency.

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JO - IEEE Electron Device Letters

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Enhanced hot-carrier induced degradation in shallow trench isolated narrow channel PMOSFET's

Abstract

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