Enhanced light emission in vertical-structured GaN-based light-emitting diodes with trench etching and arrayed p-electrodes

Tseng Hsing Lin; Shui Jinn Wang; Yung Chun Tu; Chien Hsiung Hung; Che An Lin; Yung Cheng Lin; Zong Sian You

doi:10.1016/j.sse.2015.02.021

Enhanced light emission in vertical-structured GaN-based light-emitting diodes with trench etching and arrayed p-electrodes

Tseng Hsing Lin, Shui Jinn Wang, Yung Chun Tu, Chien Hsiung Hung, Che An Lin, Yung Cheng Lin, Zong Sian You

Institute of Microelectronics

Research output: Contribution to journal › Letter › peer-review

6 Citations (Scopus)

Abstract

We investigate the effect of trench etching and arrayed p-electrodes in improving current spreading and the efficiency of light extraction of GaN-based vertical-structured light-emitting diodes (VLEDs). Both simulated and experimental results on the uniformities of current distribution and light emission are presented and discussed. For a 2 × 2 array VLED with a die size of 1020 × 1020 μm², enhancements in light output power by 0.38% (6.03%) and wall-plug efficiency by 2.79% (2.32%) at 364.4 mA/mm² (728.9 mA/mm²) as compared with that of regular VLED are achieved experimentally, which are attributed to improved current spreading from the arrayed p-electrode and trench designs as well as enhanced light emission from the trench region.

Original language	English
Pages (from-to)	30-34
Number of pages	5
Journal	Solid-State Electronics
Volume	107
DOIs	https://doi.org/10.1016/j.sse.2015.02.021
Publication status	Published - 2015 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2015.02.021

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@article{61bb7aff4b154c4381b543d94417e7a8,

title = "Enhanced light emission in vertical-structured GaN-based light-emitting diodes with trench etching and arrayed p-electrodes",

abstract = "We investigate the effect of trench etching and arrayed p-electrodes in improving current spreading and the efficiency of light extraction of GaN-based vertical-structured light-emitting diodes (VLEDs). Both simulated and experimental results on the uniformities of current distribution and light emission are presented and discussed. For a 2 × 2 array VLED with a die size of 1020 × 1020 μm2, enhancements in light output power by 0.38% (6.03%) and wall-plug efficiency by 2.79% (2.32%) at 364.4 mA/mm2 (728.9 mA/mm2) as compared with that of regular VLED are achieved experimentally, which are attributed to improved current spreading from the arrayed p-electrode and trench designs as well as enhanced light emission from the trench region.",

author = "Lin, {Tseng Hsing} and Wang, {Shui Jinn} and Tu, {Yung Chun} and Hung, {Chien Hsiung} and Lin, {Che An} and Lin, {Yung Cheng} and You, {Zong Sian}",

note = "Funding Information: This work was supported by the Ministry of Science and Technology (MOST), Republic of China (Taiwan), under Grants MOST-103-2221-E-006-132 and NSC-102-2221-E-006-217-MY2. Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd.",

year = "2015",

month = may,

doi = "10.1016/j.sse.2015.02.021",

language = "English",

volume = "107",

pages = "30--34",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Enhanced light emission in vertical-structured GaN-based light-emitting diodes with trench etching and arrayed p-electrodes

AU - Lin, Tseng Hsing

AU - Wang, Shui Jinn

AU - Tu, Yung Chun

AU - Hung, Chien Hsiung

AU - Lin, Che An

AU - Lin, Yung Cheng

AU - You, Zong Sian

N1 - Funding Information: This work was supported by the Ministry of Science and Technology (MOST), Republic of China (Taiwan), under Grants MOST-103-2221-E-006-132 and NSC-102-2221-E-006-217-MY2. Publisher Copyright: © 2015 Elsevier Ltd.

PY - 2015/5

Y1 - 2015/5

N2 - We investigate the effect of trench etching and arrayed p-electrodes in improving current spreading and the efficiency of light extraction of GaN-based vertical-structured light-emitting diodes (VLEDs). Both simulated and experimental results on the uniformities of current distribution and light emission are presented and discussed. For a 2 × 2 array VLED with a die size of 1020 × 1020 μm2, enhancements in light output power by 0.38% (6.03%) and wall-plug efficiency by 2.79% (2.32%) at 364.4 mA/mm2 (728.9 mA/mm2) as compared with that of regular VLED are achieved experimentally, which are attributed to improved current spreading from the arrayed p-electrode and trench designs as well as enhanced light emission from the trench region.

AB - We investigate the effect of trench etching and arrayed p-electrodes in improving current spreading and the efficiency of light extraction of GaN-based vertical-structured light-emitting diodes (VLEDs). Both simulated and experimental results on the uniformities of current distribution and light emission are presented and discussed. For a 2 × 2 array VLED with a die size of 1020 × 1020 μm2, enhancements in light output power by 0.38% (6.03%) and wall-plug efficiency by 2.79% (2.32%) at 364.4 mA/mm2 (728.9 mA/mm2) as compared with that of regular VLED are achieved experimentally, which are attributed to improved current spreading from the arrayed p-electrode and trench designs as well as enhanced light emission from the trench region.

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U2 - 10.1016/j.sse.2015.02.021

DO - 10.1016/j.sse.2015.02.021

M3 - Letter

AN - SCOPUS:84924734038

SN - 0038-1101

VL - 107

SP - 30

EP - 34

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Enhanced light emission in vertical-structured GaN-based light-emitting diodes with trench etching and arrayed p-electrodes

Abstract

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