Enhanced light emission of double heterostructured MgZnO/ZnO/MgZnO in ultraviolet blind light-emitting diodes deposited by vapor cooling condensation system

Po Ching Wu; Hsin Ying Lee; Ching Ting Lee

doi:10.1063/1.3698387

Enhanced light emission of double heterostructured MgZnO/ZnO/MgZnO in ultraviolet blind light-emitting diodes deposited by vapor cooling condensation system

Po Ching Wu, Hsin Ying Lee, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

The MgZnO/ZnO/MgZnO double heterostructure was deposited at low temperature by a vapor cooling condensation system to enhance the light emission of the ultraviolet p-AlGaN/i-MgZnO/i-ZnO/i-MgZnO/n-ZnO:In light-emitting diodes (ULEDs). The defect and vacancy concentrations of the deposited films were effectively reduced. The peak intensity and total emission power of the ultraviolet electroluminescence (EL) spectra of the ULEDs were 3.08 times and 1.82 times higher than those of the p-AlGaN/i-ZnO/n-ZnO:In ULEDs, respectively. Furthermore, the visible EL emission intensity induced by defect and vacancy in the ULEDs was negligible due to the high performances of the deposited active i-ZnO films.

Original language	English
Article number	131116
Journal	Applied Physics Letters
Volume	100
Issue number	13
DOIs	https://doi.org/10.1063/1.3698387
Publication status	Published - 2012 Mar 26

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3698387

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title = "Enhanced light emission of double heterostructured MgZnO/ZnO/MgZnO in ultraviolet blind light-emitting diodes deposited by vapor cooling condensation system",

abstract = "The MgZnO/ZnO/MgZnO double heterostructure was deposited at low temperature by a vapor cooling condensation system to enhance the light emission of the ultraviolet p-AlGaN/i-MgZnO/i-ZnO/i-MgZnO/n-ZnO:In light-emitting diodes (ULEDs). The defect and vacancy concentrations of the deposited films were effectively reduced. The peak intensity and total emission power of the ultraviolet electroluminescence (EL) spectra of the ULEDs were 3.08 times and 1.82 times higher than those of the p-AlGaN/i-ZnO/n-ZnO:In ULEDs, respectively. Furthermore, the visible EL emission intensity induced by defect and vacancy in the ULEDs was negligible due to the high performances of the deposited active i-ZnO films.",

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