Enhanced light emission of double heterostructured MgZnO/ZnO/MgZnO in ultraviolet blind light-emitting diodes deposited by vapor cooling condensation system

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Abstract

The MgZnO/ZnO/MgZnO double heterostructure was deposited at low temperature by a vapor cooling condensation system to enhance the light emission of the ultraviolet p-AlGaN/i-MgZnO/i-ZnO/i-MgZnO/n-ZnO:In light-emitting diodes (ULEDs). The defect and vacancy concentrations of the deposited films were effectively reduced. The peak intensity and total emission power of the ultraviolet electroluminescence (EL) spectra of the ULEDs were 3.08 times and 1.82 times higher than those of the p-AlGaN/i-ZnO/n-ZnO:In ULEDs, respectively. Furthermore, the visible EL emission intensity induced by defect and vacancy in the ULEDs was negligible due to the high performances of the deposited active i-ZnO films.

Original languageEnglish
Article number131116
JournalApplied Physics Letters
Volume100
Issue number13
DOIs
Publication statusPublished - 2012 Mar 26

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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