Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface

X. F. Zeng, Shoou-Jinn Chang, Shih Chang Shei

Research output: Contribution to conferencePaper

Abstract

We reported the SiO2 nanopillars and microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO2 as an etching mask before ICP etching SiO2 by successive ionic layer adsorption and reaction method (SILAR), and the different heights of SiO2 nanopillars on microroughened ITO were obtained after etching. Compared to a regular (flat-surface) GaN-based LED, the light-output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO2 nanopillars on microroughened surface show the enhancement in light output power by 42.7%-49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO2 nanopillars were increasing cause more rough on the surface of GaN-based LEDs.

Original languageEnglish
Pages265-268
Number of pages4
Publication statusPublished - 2014 Jan 1
Event2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 - Qingdao, China
Duration: 2013 Oct 262013 Nov 1

Other

Other2nd International Conference on Innovation, Communication and Engineering, ICICE 2013
CountryChina
CityQingdao
Period13-10-2613-11-01

Fingerprint

Light emitting diodes
Etching
Masks
Nanoparticles
Adsorption

All Science Journal Classification (ASJC) codes

  • Management of Technology and Innovation

Cite this

Zeng, X. F., Chang, S-J., & Shei, S. C. (2014). Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface. 265-268. Paper presented at 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.
Zeng, X. F. ; Chang, Shoou-Jinn ; Shei, Shih Chang. / Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface. Paper presented at 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.4 p.
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abstract = "We reported the SiO2 nanopillars and microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO2 as an etching mask before ICP etching SiO2 by successive ionic layer adsorption and reaction method (SILAR), and the different heights of SiO2 nanopillars on microroughened ITO were obtained after etching. Compared to a regular (flat-surface) GaN-based LED, the light-output power for a LED with microroughening was increased by 33{\%}. Furthermore, the proposed LEDs with SiO2 nanopillars on microroughened surface show the enhancement in light output power by 42.7{\%}-49.1{\%} at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO2 nanopillars were increasing cause more rough on the surface of GaN-based LEDs.",
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Zeng, XF, Chang, S-J & Shei, SC 2014, 'Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface' Paper presented at 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China, 13-10-26 - 13-11-01, pp. 265-268.

Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface. / Zeng, X. F.; Chang, Shoou-Jinn; Shei, Shih Chang.

2014. 265-268 Paper presented at 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.

Research output: Contribution to conferencePaper

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AB - We reported the SiO2 nanopillars and microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO2 as an etching mask before ICP etching SiO2 by successive ionic layer adsorption and reaction method (SILAR), and the different heights of SiO2 nanopillars on microroughened ITO were obtained after etching. Compared to a regular (flat-surface) GaN-based LED, the light-output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO2 nanopillars on microroughened surface show the enhancement in light output power by 42.7%-49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO2 nanopillars were increasing cause more rough on the surface of GaN-based LEDs.

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Zeng XF, Chang S-J, Shei SC. Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface. 2014. Paper presented at 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.