Abstract
We reported the SiO2 nanopillars and microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO2 as an etching mask before ICP etching SiO2 by successive ionic layer adsorption and reaction method (SILAR), and the different heights of SiO2 nanopillars on microroughened ITO were obtained after etching. Compared to a regular (flat-surface) GaN-based LED, the light-output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO2 nanopillars on microroughened surface show the enhancement in light output power by 42.7%-49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO2 nanopillars were increasing cause more rough on the surface of GaN-based LEDs.
| Original language | English |
|---|---|
| Pages | 265-268 |
| Number of pages | 4 |
| Publication status | Published - 2014 Jan 1 |
| Event | 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 - Qingdao, China Duration: 2013 Oct 26 → 2013 Nov 1 |
Other
| Other | 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 |
|---|---|
| Country | China |
| City | Qingdao |
| Period | 13-10-26 → 13-11-01 |
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All Science Journal Classification (ASJC) codes
- Management of Technology and Innovation
Cite this
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Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface. / Zeng, X. F.; Chang, Shoou-Jinn; Shei, Shih Chang.
2014. 265-268 Paper presented at 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.Research output: Contribution to conference › Paper
TY - CONF
T1 - Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface
AU - Zeng, X. F.
AU - Chang, Shoou-Jinn
AU - Shei, Shih Chang
PY - 2014/1/1
Y1 - 2014/1/1
N2 - We reported the SiO2 nanopillars and microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO2 as an etching mask before ICP etching SiO2 by successive ionic layer adsorption and reaction method (SILAR), and the different heights of SiO2 nanopillars on microroughened ITO were obtained after etching. Compared to a regular (flat-surface) GaN-based LED, the light-output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO2 nanopillars on microroughened surface show the enhancement in light output power by 42.7%-49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO2 nanopillars were increasing cause more rough on the surface of GaN-based LEDs.
AB - We reported the SiO2 nanopillars and microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO2 as an etching mask before ICP etching SiO2 by successive ionic layer adsorption and reaction method (SILAR), and the different heights of SiO2 nanopillars on microroughened ITO were obtained after etching. Compared to a regular (flat-surface) GaN-based LED, the light-output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO2 nanopillars on microroughened surface show the enhancement in light output power by 42.7%-49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO2 nanopillars were increasing cause more rough on the surface of GaN-based LEDs.
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M3 - Paper
AN - SCOPUS:84896633183
SP - 265
EP - 268
ER -