Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface

X. F. Zeng; S. J. Chang; Shih Chang Shei

Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface

X. F. Zeng, S. J. Chang, Shih Chang Shei

Research output: Contribution to conference › Paper › peer-review

Abstract

We reported the SiO₂ nanopillars and microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO₂ as an etching mask before ICP etching SiO₂ by successive ionic layer adsorption and reaction method (SILAR), and the different heights of SiO₂ nanopillars on microroughened ITO were obtained after etching. Compared to a regular (flat-surface) GaN-based LED, the light-output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO₂ nanopillars on microroughened surface show the enhancement in light output power by 42.7%-49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO₂ nanopillars were increasing cause more rough on the surface of GaN-based LEDs.

Original language	English
Pages	265-268
Number of pages	4
Publication status	Published - 2014
Event	2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 - Qingdao, China Duration: 2013 Oct 26 → 2013 Nov 1

Other

Other	2nd International Conference on Innovation, Communication and Engineering, ICICE 2013
Country/Territory	China
City	Qingdao
Period	13-10-26 → 13-11-01

All Science Journal Classification (ASJC) codes

Management of Technology and Innovation

Cite this

@conference{cfc7d81e23ca477fb885b294d853a150,

title = "Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface",

abstract = "We reported the SiO2 nanopillars and microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO2 as an etching mask before ICP etching SiO2 by successive ionic layer adsorption and reaction method (SILAR), and the different heights of SiO2 nanopillars on microroughened ITO were obtained after etching. Compared to a regular (flat-surface) GaN-based LED, the light-output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO2 nanopillars on microroughened surface show the enhancement in light output power by 42.7%-49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO2 nanopillars were increasing cause more rough on the surface of GaN-based LEDs.",

author = "Zeng, {X. F.} and Chang, {S. J.} and Shei, {Shih Chang}",

note = "Copyright: Copyright 2014 Elsevier B.V., All rights reserved.; 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 ; Conference date: 26-10-2013 Through 01-11-2013",

year = "2014",

language = "English",

pages = "265--268",

}

TY - CONF

T1 - Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface

AU - Zeng, X. F.

AU - Chang, S. J.

AU - Shei, Shih Chang

PY - 2014

Y1 - 2014

N2 - We reported the SiO2 nanopillars and microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO2 as an etching mask before ICP etching SiO2 by successive ionic layer adsorption and reaction method (SILAR), and the different heights of SiO2 nanopillars on microroughened ITO were obtained after etching. Compared to a regular (flat-surface) GaN-based LED, the light-output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO2 nanopillars on microroughened surface show the enhancement in light output power by 42.7%-49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO2 nanopillars were increasing cause more rough on the surface of GaN-based LEDs.

AB - We reported the SiO2 nanopillars and microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO2 as an etching mask before ICP etching SiO2 by successive ionic layer adsorption and reaction method (SILAR), and the different heights of SiO2 nanopillars on microroughened ITO were obtained after etching. Compared to a regular (flat-surface) GaN-based LED, the light-output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO2 nanopillars on microroughened surface show the enhancement in light output power by 42.7%-49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO2 nanopillars were increasing cause more rough on the surface of GaN-based LEDs.

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M3 - Paper

AN - SCOPUS:84896633183

SP - 265

EP - 268

T2 - 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013

Y2 - 26 October 2013 through 1 November 2013

ER -

Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface

Abstract

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