Enhanced light extraction mechanism of GaN-based light-emitting diodes using top surface and side-wall nanorod arrays

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Using a self-catalyst vaporliquidsolid mechanism, random indiumtinoxide (ITO) nanorod arrays were deposited on the top surface and side-wall of GaN-based light-emitting diodes (LEDs) by electron-beam deposition. When the side-wall nanorod arrays and the top surface ITO nanorod arrays were deposited at an oblique-angle of 45°, roughened surface morphology and matched refractive index of 1.6 between air and the p-GaN layer could be obtained. Comparing the conventional LEDs without ITO nanorod arrays, a 34% light output power increase was attributed to the roughened top and side-wall surface morphology and the matched refractive index caused by the ITO nanorod arrays. Not only were the side-wall nanorod arrays used to increase light output power, but the light output divergence angle could be widened by using side-wall nanorod arrays.

Original languageEnglish
Article number5471200
Pages (from-to)1132-1134
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number15
DOIs
Publication statusPublished - 2010 Jul 20

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Enhanced light extraction mechanism of GaN-based light-emitting diodes using top surface and side-wall nanorod arrays'. Together they form a unique fingerprint.

  • Cite this