Enhanced light extraction of GaN-based light emitting diodes using nanorod arrays

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Abstract

Using a self-shadowing nature, various indium tin oxide (ITO) nanorod arrays were deposited on the surface of GaN-based light emitting diodes (LEDs) by an electron-beam deposition system. The surface morphology and effective refractive index could be controlled by the oblique angle of the deposited ITO nanorod arrays. The surface morphology and the matching refractive index of 1.6 between air and p-GaN layer were obtained for the ITO nanorod arrays with an oblique angle of 45°. Comparing the conventional LEDs without ITO nanorod arrays, the light output power increase of 26.4% is attributed to the surface morphology and the matching refractive index obtained by the ITO nanorod arrays.

Original languageEnglish
Pages (from-to)H278-H280
JournalElectrochemical and Solid-State Letters
Volume13
Issue number8
DOIs
Publication statusPublished - 2010 Jun 21

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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