Enhanced light output of AIGalnP light emitting diodes using an indium-zinc oxide transparent conduction layer and electroplated metal substrate

Der Ming Kuo; Shui Jinn Wang; Kai Ming Uang; Tron Min Chen; Wei Chi Lee; Pei Ren Wang

doi:10.1143/APEX.4.012101

Enhanced light output of AIGalnP light emitting diodes using an indium-zinc oxide transparent conduction layer and electroplated metal substrate

Der Ming Kuo, Shui Jinn Wang, Kai Ming Uang, Tron Min Chen, Wei Chi Lee, Pei Ren Wang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The use of indium-zinc oxide (IZO) as a transparent conduction layer (TCL) for electroplated nickel metal substrate AIGalnP light-emitting diodes with a 300 × 300 μm² chip size was investigated with regard to both fabrication and effectiveness in improving light extraction efficiency. A metal system consisting of AuGe/Au was deposited to form ohmic contact dots for the n⁺-GaAs layer, and then an IZO film was deposited to serve as a TCL. Compared with conventional light emitting diodes (LEDs) with GaAs substrates, the proposed LEDs show an increase in light output power (i.e., δL _op/L_op) by 116.7% at 20 mA and 168.9% at 100 mA.

Original language	English
Article number	012101
Journal	Applied Physics Express
Volume	4
Issue number	1
DOIs	https://doi.org/10.1143/APEX.4.012101
Publication status	Published - 2011 Jan

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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title = "Enhanced light output of AIGalnP light emitting diodes using an indium-zinc oxide transparent conduction layer and electroplated metal substrate",

abstract = "The use of indium-zinc oxide (IZO) as a transparent conduction layer (TCL) for electroplated nickel metal substrate AIGalnP light-emitting diodes with a 300 × 300 μm2 chip size was investigated with regard to both fabrication and effectiveness in improving light extraction efficiency. A metal system consisting of AuGe/Au was deposited to form ohmic contact dots for the n+-GaAs layer, and then an IZO film was deposited to serve as a TCL. Compared with conventional light emitting diodes (LEDs) with GaAs substrates, the proposed LEDs show an increase in light output power (i.e., δL op/Lop) by 116.7% at 20 mA and 168.9% at 100 mA.",

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AU - Kuo, Der Ming

AU - Wang, Shui Jinn

AU - Uang, Kai Ming

AU - Chen, Tron Min

AU - Lee, Wei Chi

AU - Wang, Pei Ren

PY - 2011/1

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AB - The use of indium-zinc oxide (IZO) as a transparent conduction layer (TCL) for electroplated nickel metal substrate AIGalnP light-emitting diodes with a 300 × 300 μm2 chip size was investigated with regard to both fabrication and effectiveness in improving light extraction efficiency. A metal system consisting of AuGe/Au was deposited to form ohmic contact dots for the n+-GaAs layer, and then an IZO film was deposited to serve as a TCL. Compared with conventional light emitting diodes (LEDs) with GaAs substrates, the proposed LEDs show an increase in light output power (i.e., δL op/Lop) by 116.7% at 20 mA and 168.9% at 100 mA.

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Enhanced light output of AIGalnP light emitting diodes using an indium-zinc oxide transparent conduction layer and electroplated metal substrate

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