Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers

J. K. Sheu; S. J. Tu; M. L. Lee; Y. H. Yeh; C. C. Yang; F. W. Huang; W. C. Lai; C. W. Chen; G. C. Chi

doi:10.1109/LED.2011.2161454

Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, G. C. Chi

Department of Photonics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

GaN-based LEDs grown on Si-implanted GaN templates form air gaps beneath the active layer to enhance light-extraction efficiency. GaN-based epitaxial layers grown on selective Si-implanted regions had lower growth rates compared with those grown on implantation-free regions, resulting in selective growth and the subsequent over the Si-implanted regions. Accordingly, air gaps were formed over the Si-implanted regions after the meeting of laterally growing GaN facet fronts. The experimental results indicate that the light-output power of the LEDs grown on the Si-implanted GaN templates was enhanced by 36% compared with conventional LEDs. This enhancement in output power was attributed mainly to the air gaps, which led to a higher escape probability for the photons.

Original language	English
Article number	5967887
Pages (from-to)	1400-1402
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	10
DOIs	https://doi.org/10.1109/LED.2011.2161454
Publication status	Published - 2011 Oct

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2011.2161454

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title = "Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers",

abstract = "GaN-based LEDs grown on Si-implanted GaN templates form air gaps beneath the active layer to enhance light-extraction efficiency. GaN-based epitaxial layers grown on selective Si-implanted regions had lower growth rates compared with those grown on implantation-free regions, resulting in selective growth and the subsequent over the Si-implanted regions. Accordingly, air gaps were formed over the Si-implanted regions after the meeting of laterally growing GaN facet fronts. The experimental results indicate that the light-output power of the LEDs grown on the Si-implanted GaN templates was enhanced by 36% compared with conventional LEDs. This enhancement in output power was attributed mainly to the air gaps, which led to a higher escape probability for the photons.",

author = "Sheu, {J. K.} and Tu, {S. J.} and Lee, {M. L.} and Yeh, {Y. H.} and Yang, {C. C.} and Huang, {F. W.} and Lai, {W. C.} and Chen, {C. W.} and Chi, {G. C.}",

note = "Funding Information: Manuscript received June 4, 2011; revised June 22, 2011; accepted June 29, 2011. Date of publication July 31. 2011; date of current version September 28, 2011. This work was supported in part by the Bureau of Energy of the Ministry of Economic Affairs of Taiwan under Grant 99-D0204-6 and in part by the National Science Council under Grant NSC 97-2221-E-006-242-MY3, Grant 98-2221-E-218-005-MY3, and Grant 100-3113-E006-015. The review of this letter was arranged by Editor P. K.-L. Yu.",

year = "2011",

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doi = "10.1109/LED.2011.2161454",

language = "English",

volume = "32",

pages = "1400--1402",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers. / Sheu, J. K.; Tu, S. J.; Lee, M. L.; Yeh, Y. H.; Yang, C. C.; Huang, F. W.; Lai, W. C.; Chen, C. W.; Chi, G. C.

In: IEEE Electron Device Letters, Vol. 32, No. 10, 5967887, 10.2011, p. 1400-1402.

Research output: Contribution to journal › Article › peer-review

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T1 - Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers

AU - Sheu, J. K.

AU - Tu, S. J.

AU - Lee, M. L.

AU - Yeh, Y. H.

AU - Yang, C. C.

AU - Huang, F. W.

AU - Lai, W. C.

AU - Chen, C. W.

AU - Chi, G. C.

N1 - Funding Information: Manuscript received June 4, 2011; revised June 22, 2011; accepted June 29, 2011. Date of publication July 31. 2011; date of current version September 28, 2011. This work was supported in part by the Bureau of Energy of the Ministry of Economic Affairs of Taiwan under Grant 99-D0204-6 and in part by the National Science Council under Grant NSC 97-2221-E-006-242-MY3, Grant 98-2221-E-218-005-MY3, and Grant 100-3113-E006-015. The review of this letter was arranged by Editor P. K.-L. Yu.

PY - 2011/10

Y1 - 2011/10

N2 - GaN-based LEDs grown on Si-implanted GaN templates form air gaps beneath the active layer to enhance light-extraction efficiency. GaN-based epitaxial layers grown on selective Si-implanted regions had lower growth rates compared with those grown on implantation-free regions, resulting in selective growth and the subsequent over the Si-implanted regions. Accordingly, air gaps were formed over the Si-implanted regions after the meeting of laterally growing GaN facet fronts. The experimental results indicate that the light-output power of the LEDs grown on the Si-implanted GaN templates was enhanced by 36% compared with conventional LEDs. This enhancement in output power was attributed mainly to the air gaps, which led to a higher escape probability for the photons.

AB - GaN-based LEDs grown on Si-implanted GaN templates form air gaps beneath the active layer to enhance light-extraction efficiency. GaN-based epitaxial layers grown on selective Si-implanted regions had lower growth rates compared with those grown on implantation-free regions, resulting in selective growth and the subsequent over the Si-implanted regions. Accordingly, air gaps were formed over the Si-implanted regions after the meeting of laterally growing GaN facet fronts. The experimental results indicate that the light-output power of the LEDs grown on the Si-implanted GaN templates was enhanced by 36% compared with conventional LEDs. This enhancement in output power was attributed mainly to the air gaps, which led to a higher escape probability for the photons.

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Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers

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