Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, G. C. Chi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

GaN-based LEDs grown on Si-implanted GaN templates form air gaps beneath the active layer to enhance light-extraction efficiency. GaN-based epitaxial layers grown on selective Si-implanted regions had lower growth rates compared with those grown on implantation-free regions, resulting in selective growth and the subsequent over the Si-implanted regions. Accordingly, air gaps were formed over the Si-implanted regions after the meeting of laterally growing GaN facet fronts. The experimental results indicate that the light-output power of the LEDs grown on the Si-implanted GaN templates was enhanced by 36% compared with conventional LEDs. This enhancement in output power was attributed mainly to the air gaps, which led to a higher escape probability for the photons.

Original languageEnglish
Article number5967887
Pages (from-to)1400-1402
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number10
DOIs
Publication statusPublished - 2011 Oct 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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