Enhanced light output of GaN-based thin-film flip-chip light-emitting diodes by surface texturing using laser ablation and chemical etching

Tseng Hsing Lin, Shui-Jinn Wang, Yung Chun Tu, Chien Hsiung Hung, Zong Sian You, Yu Hsueh Chin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A surface texturing scheme using ablation etching by KrF excimer laser irradiation and chemical wet etching is demonstrated to improve the light-extraction efficiency of GaN-based thin-film flip-chip light-emitting diodes (TFFC-LED). Both simulated and experimental results on the light emission characteristics are presented and discussed. For the TFFC-LED (die size of 1×1 mm 2 ) with the proposed surface roughening scheme, enhancements in light output power (LOP) by 13.08% (12.81%) and wall-plug efficiency (WPE) by 2.87% (2.25%) at 350 mA (700 mA) as compared with that of the TFFC-LED without surface texturing are achieved experimentally.

Original languageEnglish
Title of host publication73rd Annual Device Research Conference, DRC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages123-124
Number of pages2
ISBN (Electronic)9781467381345
DOIs
Publication statusPublished - 2015 Aug 3
Event73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
Duration: 2015 Jun 212015 Jun 24

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2015-August
ISSN (Print)1548-3770

Other

Other73rd Annual Device Research Conference, DRC 2015
CountryUnited States
CityColumbus
Period15-06-2115-06-24

Fingerprint

Texturing
Laser ablation
Light emitting diodes
Etching
Thin films
Wet etching
Light emission
Excimer lasers
Laser beam effects
Ablation

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Lin, T. H., Wang, S-J., Tu, Y. C., Hung, C. H., You, Z. S., & Chin, Y. H. (2015). Enhanced light output of GaN-based thin-film flip-chip light-emitting diodes by surface texturing using laser ablation and chemical etching. In 73rd Annual Device Research Conference, DRC 2015 (pp. 123-124). [7175586] (Device Research Conference - Conference Digest, DRC; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2015.7175586
Lin, Tseng Hsing ; Wang, Shui-Jinn ; Tu, Yung Chun ; Hung, Chien Hsiung ; You, Zong Sian ; Chin, Yu Hsueh. / Enhanced light output of GaN-based thin-film flip-chip light-emitting diodes by surface texturing using laser ablation and chemical etching. 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 123-124 (Device Research Conference - Conference Digest, DRC).
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title = "Enhanced light output of GaN-based thin-film flip-chip light-emitting diodes by surface texturing using laser ablation and chemical etching",
abstract = "A surface texturing scheme using ablation etching by KrF excimer laser irradiation and chemical wet etching is demonstrated to improve the light-extraction efficiency of GaN-based thin-film flip-chip light-emitting diodes (TFFC-LED). Both simulated and experimental results on the light emission characteristics are presented and discussed. For the TFFC-LED (die size of 1×1 mm 2 ) with the proposed surface roughening scheme, enhancements in light output power (LOP) by 13.08{\%} (12.81{\%}) and wall-plug efficiency (WPE) by 2.87{\%} (2.25{\%}) at 350 mA (700 mA) as compared with that of the TFFC-LED without surface texturing are achieved experimentally.",
author = "Lin, {Tseng Hsing} and Shui-Jinn Wang and Tu, {Yung Chun} and Hung, {Chien Hsiung} and You, {Zong Sian} and Chin, {Yu Hsueh}",
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doi = "10.1109/DRC.2015.7175586",
language = "English",
series = "Device Research Conference - Conference Digest, DRC",
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Lin, TH, Wang, S-J, Tu, YC, Hung, CH, You, ZS & Chin, YH 2015, Enhanced light output of GaN-based thin-film flip-chip light-emitting diodes by surface texturing using laser ablation and chemical etching. in 73rd Annual Device Research Conference, DRC 2015., 7175586, Device Research Conference - Conference Digest, DRC, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. 123-124, 73rd Annual Device Research Conference, DRC 2015, Columbus, United States, 15-06-21. https://doi.org/10.1109/DRC.2015.7175586

Enhanced light output of GaN-based thin-film flip-chip light-emitting diodes by surface texturing using laser ablation and chemical etching. / Lin, Tseng Hsing; Wang, Shui-Jinn; Tu, Yung Chun; Hung, Chien Hsiung; You, Zong Sian; Chin, Yu Hsueh.

73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 123-124 7175586 (Device Research Conference - Conference Digest, DRC; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Enhanced light output of GaN-based thin-film flip-chip light-emitting diodes by surface texturing using laser ablation and chemical etching

AU - Lin, Tseng Hsing

AU - Wang, Shui-Jinn

AU - Tu, Yung Chun

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AU - You, Zong Sian

AU - Chin, Yu Hsueh

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N2 - A surface texturing scheme using ablation etching by KrF excimer laser irradiation and chemical wet etching is demonstrated to improve the light-extraction efficiency of GaN-based thin-film flip-chip light-emitting diodes (TFFC-LED). Both simulated and experimental results on the light emission characteristics are presented and discussed. For the TFFC-LED (die size of 1×1 mm 2 ) with the proposed surface roughening scheme, enhancements in light output power (LOP) by 13.08% (12.81%) and wall-plug efficiency (WPE) by 2.87% (2.25%) at 350 mA (700 mA) as compared with that of the TFFC-LED without surface texturing are achieved experimentally.

AB - A surface texturing scheme using ablation etching by KrF excimer laser irradiation and chemical wet etching is demonstrated to improve the light-extraction efficiency of GaN-based thin-film flip-chip light-emitting diodes (TFFC-LED). Both simulated and experimental results on the light emission characteristics are presented and discussed. For the TFFC-LED (die size of 1×1 mm 2 ) with the proposed surface roughening scheme, enhancements in light output power (LOP) by 13.08% (12.81%) and wall-plug efficiency (WPE) by 2.87% (2.25%) at 350 mA (700 mA) as compared with that of the TFFC-LED without surface texturing are achieved experimentally.

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Lin TH, Wang S-J, Tu YC, Hung CH, You ZS, Chin YH. Enhanced light output of GaN-based thin-film flip-chip light-emitting diodes by surface texturing using laser ablation and chemical etching. In 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 123-124. 7175586. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2015.7175586