@inproceedings{a955ded2d3b643a99a43c31ffe7869b4,
title = "Enhanced light output of GaN-based thin-film flip-chip light-emitting diodes by surface texturing using laser ablation and chemical etching",
abstract = "A surface texturing scheme using ablation etching by KrF excimer laser irradiation and chemical wet etching is demonstrated to improve the light-extraction efficiency of GaN-based thin-film flip-chip light-emitting diodes (TFFC-LED). Both simulated and experimental results on the light emission characteristics are presented and discussed. For the TFFC-LED (die size of 1×1 mm2) with the proposed surface roughening scheme, enhancements in light output power (LOP) by 13.08% (12.81%) and wall-plug efficiency (WPE) by 2.87% (2.25%) at 350 mA (700 mA) as compared with that of the TFFC-LED without surface texturing are achieved experimentally.",
author = "Lin, {Tseng Hsing} and Wang, {Shui Jinn} and Tu, {Yung Chun} and Hung, {Chien Hsiung} and You, {Zong Sian} and Chin, {Yu Hsueh}",
note = "Funding Information: This work was supported by the Ministry of Science and Technology (MOST), Republic of China (Taiwan), under grants MOST-103-2221-E-006-132 and NSC-102-2221-E-006-217-MY2.; 73rd Annual Device Research Conference, DRC 2015 ; Conference date: 21-06-2015 Through 24-06-2015",
year = "2015",
month = aug,
day = "3",
doi = "10.1109/DRC.2015.7175586",
language = "English",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "123--124",
booktitle = "73rd Annual Device Research Conference, DRC 2015",
address = "United States",
}