Enhanced light output of GaN-based vertical light-emitting diodes with superimposed circular protrusions and hexagonal cones

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, P. H. Wang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A method was demonstrated for surface texturing through integrating ablation etching by KrF excimer laser irradiation and chemical wet etching designed to improve the light-extraction efficiency of vertically structured GaN-based light-emitting diodes (VLEDs). The fabricated VLEDs with the proposed surface roughening scheme exhibited an increase in light output power by 119.3 and 107% at 350 and 750 mA, respectively, as compared to that of the flat-VLEDs. Such improvements could be attributed to the proposed method that creates a twofold surface roughness to maximize the angular randomization of photons at the emission surface significantly increases the surface area of VLEDs.

Original languageEnglish
Pages (from-to)H53-H57
JournalElectrochemical and Solid-State Letters
Volume14
Issue number2
DOIs
Publication statusPublished - 2011 Jan 28

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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