Enhanced light output of GaN-based vertical light-emitting diodes with superimposed circular protrusions and hexagonal cones

W. C. Lee; S. J. Wang; K. M. Uang; T. M. Chen; D. M. Kuo; P. R. Wang; P. H. Wang

doi:10.1149/1.3514094

Enhanced light output of GaN-based vertical light-emitting diodes with superimposed circular protrusions and hexagonal cones

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, P. H. Wang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A method was demonstrated for surface texturing through integrating ablation etching by KrF excimer laser irradiation and chemical wet etching designed to improve the light-extraction efficiency of vertically structured GaN-based light-emitting diodes (VLEDs). The fabricated VLEDs with the proposed surface roughening scheme exhibited an increase in light output power by 119.3 and 107% at 350 and 750 mA, respectively, as compared to that of the flat-VLEDs. Such improvements could be attributed to the proposed method that creates a twofold surface roughness to maximize the angular randomization of photons at the emission surface significantly increases the surface area of VLEDs.

Original language	English
Pages (from-to)	H53-H57
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	2
DOIs	https://doi.org/10.1149/1.3514094
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Enhanced light output of GaN-based vertical light-emitting diodes with superimposed circular protrusions and hexagonal cones",

abstract = "A method was demonstrated for surface texturing through integrating ablation etching by KrF excimer laser irradiation and chemical wet etching designed to improve the light-extraction efficiency of vertically structured GaN-based light-emitting diodes (VLEDs). The fabricated VLEDs with the proposed surface roughening scheme exhibited an increase in light output power by 119.3 and 107% at 350 and 750 mA, respectively, as compared to that of the flat-VLEDs. Such improvements could be attributed to the proposed method that creates a twofold surface roughness to maximize the angular randomization of photons at the emission surface significantly increases the surface area of VLEDs.",

author = "Lee, {W. C.} and Wang, {S. J.} and Uang, {K. M.} and Chen, {T. M.} and Kuo, {D. M.} and Wang, {P. R.} and Wang, {P. H.}",

year = "2011",

doi = "10.1149/1.3514094",

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T1 - Enhanced light output of GaN-based vertical light-emitting diodes with superimposed circular protrusions and hexagonal cones

AU - Lee, W. C.

AU - Wang, S. J.

AU - Uang, K. M.

AU - Chen, T. M.

AU - Kuo, D. M.

AU - Wang, P. R.

AU - Wang, P. H.

PY - 2011

Y1 - 2011

N2 - A method was demonstrated for surface texturing through integrating ablation etching by KrF excimer laser irradiation and chemical wet etching designed to improve the light-extraction efficiency of vertically structured GaN-based light-emitting diodes (VLEDs). The fabricated VLEDs with the proposed surface roughening scheme exhibited an increase in light output power by 119.3 and 107% at 350 and 750 mA, respectively, as compared to that of the flat-VLEDs. Such improvements could be attributed to the proposed method that creates a twofold surface roughness to maximize the angular randomization of photons at the emission surface significantly increases the surface area of VLEDs.

AB - A method was demonstrated for surface texturing through integrating ablation etching by KrF excimer laser irradiation and chemical wet etching designed to improve the light-extraction efficiency of vertically structured GaN-based light-emitting diodes (VLEDs). The fabricated VLEDs with the proposed surface roughening scheme exhibited an increase in light output power by 119.3 and 107% at 350 and 750 mA, respectively, as compared to that of the flat-VLEDs. Such improvements could be attributed to the proposed method that creates a twofold surface roughness to maximize the angular randomization of photons at the emission surface significantly increases the surface area of VLEDs.

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JF - Electrochemical and Solid-State Letters

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Enhanced light output of GaN-based vertical light-emitting diodes with superimposed circular protrusions and hexagonal cones

Abstract

All Science Journal Classification (ASJC) codes

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