Enhanced light output of vertical GaN-based LEDs with surface roughened by SiO2 nanotube arrays

Der Ming Kuo; Shui Jinn Wang; Kai Ming Uang; Tron Min Chen; Wei Chi Lee; Pei Ren Wang

doi:10.1149/1.3516955

Enhanced light output of vertical GaN-based LEDs with surface roughened by SiO₂ nanotube arrays

Der Ming Kuo, Shui Jinn Wang, Kai Ming Uang, Tron Min Chen, Wei Chi Lee, Pei Ren Wang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The fabrication of SiO₂ nanotube (SiO₂ -NT) arrays and their promising application in improving light extraction of vertical structure GaN-based light emitting diodes (LEDs) are proposed. Compared to regular vertical-conducting light emitting dioded (VLEDs), the proposed VLEDs with SiO₂ -NT arrays (2-3 μm in length) show increases in light output power (Lop) by 49.8-60.4% at 350 mA. In comparison to VLEDs with ZnO nanowire arrays having the same the dimension, enhancement of 12.3-22.9% in Lop has been achieved from the proposed devices. These improvements could be attributed to the use of SiO₂ -NT arrays that not only boost the angular randomization of emitted photons but also enhance light transmission from the waveguiding effect.

Original language	English
Pages (from-to)	H66-H68
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	2
DOIs	https://doi.org/10.1149/1.3516955
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Electrical and Electronic Engineering
Electrochemistry
Physical and Theoretical Chemistry

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10.1149/1.3516955

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abstract = "The fabrication of SiO2 nanotube (SiO2 -NT) arrays and their promising application in improving light extraction of vertical structure GaN-based light emitting diodes (LEDs) are proposed. Compared to regular vertical-conducting light emitting dioded (VLEDs), the proposed VLEDs with SiO2 -NT arrays (2-3 μm in length) show increases in light output power (Lop) by 49.8-60.4% at 350 mA. In comparison to VLEDs with ZnO nanowire arrays having the same the dimension, enhancement of 12.3-22.9% in Lop has been achieved from the proposed devices. These improvements could be attributed to the use of SiO2 -NT arrays that not only boost the angular randomization of emitted photons but also enhance light transmission from the waveguiding effect.",

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AU - Kuo, Der Ming

AU - Wang, Shui Jinn

AU - Uang, Kai Ming

AU - Chen, Tron Min

AU - Lee, Wei Chi

AU - Wang, Pei Ren

PY - 2011

Y1 - 2011

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AB - The fabrication of SiO2 nanotube (SiO2 -NT) arrays and their promising application in improving light extraction of vertical structure GaN-based light emitting diodes (LEDs) are proposed. Compared to regular vertical-conducting light emitting dioded (VLEDs), the proposed VLEDs with SiO2 -NT arrays (2-3 μm in length) show increases in light output power (Lop) by 49.8-60.4% at 350 mA. In comparison to VLEDs with ZnO nanowire arrays having the same the dimension, enhancement of 12.3-22.9% in Lop has been achieved from the proposed devices. These improvements could be attributed to the use of SiO2 -NT arrays that not only boost the angular randomization of emitted photons but also enhance light transmission from the waveguiding effect.

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Enhanced light output of vertical GaN-based LEDs with surface roughened by SiO₂ nanotube arrays

Abstract

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