Enhanced light output of vertical GaN-based LEDs with surface roughened by refractive-index-matched Si 3 N 4 /GaN nanowire arrays

Yung Chun Tu, Shui-Jinn Wang, Guan Yu Lin, Tseng Hsing Lin, Chien Hsiung Hung, Fu Shou Tsai, Kai Ming Uang, Tron Min Chen

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A surface roughening scheme with Si 3 N 4 -coated GaN nanowire (NW) arrays is proposed to improve the light extraction efficiency of GaN-based vertical light-emitting diodes (VLEDs). The scheme allows a graded refractive index that varies from 2.5 (GaN) to 1.9-2.0 (Si 3 N 4 ) to 1 (air). Experimental results show that the use of 0.8-μm-long GaN NW arrays coated with a 250-nm-thick Si 3 N 4 film enhances the light output power by 28.7% at 350mA compared with that of regular VLEDs with a KOH-roughened surface. This enhancement is attributed to the Si 3 N 4 /GaN NW arrays effectively releasing total internal reflection and minimizing Fresnel loss.

Original languageEnglish
Article number042101
JournalApplied Physics Express
Volume7
Issue number4
DOIs
Publication statusPublished - 2014 Jan 1

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Nanowires
Light emitting diodes
Refractive index
nanowires
light emitting diodes
refractivity
output
releasing
augmentation
air
Air

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Tu, Yung Chun ; Wang, Shui-Jinn ; Lin, Guan Yu ; Lin, Tseng Hsing ; Hung, Chien Hsiung ; Tsai, Fu Shou ; Uang, Kai Ming ; Chen, Tron Min. / Enhanced light output of vertical GaN-based LEDs with surface roughened by refractive-index-matched Si 3 N 4 /GaN nanowire arrays In: Applied Physics Express. 2014 ; Vol. 7, No. 4.
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abstract = "A surface roughening scheme with Si 3 N 4 -coated GaN nanowire (NW) arrays is proposed to improve the light extraction efficiency of GaN-based vertical light-emitting diodes (VLEDs). The scheme allows a graded refractive index that varies from 2.5 (GaN) to 1.9-2.0 (Si 3 N 4 ) to 1 (air). Experimental results show that the use of 0.8-μm-long GaN NW arrays coated with a 250-nm-thick Si 3 N 4 film enhances the light output power by 28.7{\%} at 350mA compared with that of regular VLEDs with a KOH-roughened surface. This enhancement is attributed to the Si 3 N 4 /GaN NW arrays effectively releasing total internal reflection and minimizing Fresnel loss.",
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Enhanced light output of vertical GaN-based LEDs with surface roughened by refractive-index-matched Si 3 N 4 /GaN nanowire arrays . / Tu, Yung Chun; Wang, Shui-Jinn; Lin, Guan Yu; Lin, Tseng Hsing; Hung, Chien Hsiung; Tsai, Fu Shou; Uang, Kai Ming; Chen, Tron Min.

In: Applied Physics Express, Vol. 7, No. 4, 042101, 01.01.2014.

Research output: Contribution to journalArticle

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AU - Tu, Yung Chun

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AU - Lin, Guan Yu

AU - Lin, Tseng Hsing

AU - Hung, Chien Hsiung

AU - Tsai, Fu Shou

AU - Uang, Kai Ming

AU - Chen, Tron Min

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