Enhanced light output of vertical GaN-based LEDs with surface roughened by refractive-index-matched Si3N4/GaN nanowire arrays

Yung Chun Tu, Shui Jinn Wang, Guan Yu Lin, Tseng Hsing Lin, Chien Hsiung Hung, Fu Shou Tsai, Kai Ming Uang, Tron Min Chen

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A surface roughening scheme with Si3N4-coated GaN nanowire (NW) arrays is proposed to improve the light extraction efficiency of GaN-based vertical light-emitting diodes (VLEDs). The scheme allows a graded refractive index that varies from 2.5 (GaN) to 1.9-2.0 (Si3N 4) to 1 (air). Experimental results show that the use of 0.8-μm-long GaN NW arrays coated with a 250-nm-thick Si3N 4 film enhances the light output power by 28.7% at 350mA compared with that of regular VLEDs with a KOH-roughened surface. This enhancement is attributed to the Si3N4/GaN NW arrays effectively releasing total internal reflection and minimizing Fresnel loss.

Original languageEnglish
Article number042101
JournalApplied Physics Express
Volume7
Issue number4
DOIs
Publication statusPublished - 2014 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Enhanced light output of vertical GaN-based LEDs with surface roughened by refractive-index-matched Si<sub>3</sub>N<sub>4</sub>/GaN nanowire arrays'. Together they form a unique fingerprint.

  • Cite this