Enhanced light output of vertical GaN-based LEDs with surface roughened by refractive-index-matched Si3N4/GaN nanowire arrays

Yung Chun Tu; Shui Jinn Wang; Guan Yu Lin; Tseng Hsing Lin; Chien Hsiung Hung; Fu Shou Tsai; Kai Ming Uang; Tron Min Chen

doi:10.7567/APEX.7.042101

Enhanced light output of vertical GaN-based LEDs with surface roughened by refractive-index-matched Si₃N₄/GaN nanowire arrays

Yung Chun Tu, Shui Jinn Wang, Guan Yu Lin, Tseng Hsing Lin, Chien Hsiung Hung, Fu Shou Tsai, Kai Ming Uang, Tron Min Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A surface roughening scheme with Si₃N₄-coated GaN nanowire (NW) arrays is proposed to improve the light extraction efficiency of GaN-based vertical light-emitting diodes (VLEDs). The scheme allows a graded refractive index that varies from 2.5 (GaN) to 1.9-2.0 (Si₃N ₄) to 1 (air). Experimental results show that the use of 0.8-μm-long GaN NW arrays coated with a 250-nm-thick Si₃N ₄ film enhances the light output power by 28.7% at 350mA compared with that of regular VLEDs with a KOH-roughened surface. This enhancement is attributed to the Si₃N₄/GaN NW arrays effectively releasing total internal reflection and minimizing Fresnel loss.

Original language	English
Article number	042101
Journal	Applied Physics Express
Volume	7
Issue number	4
DOIs	https://doi.org/10.7567/APEX.7.042101
Publication status	Published - 2014 Apr

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

Access to Document

10.7567/APEX.7.042101

Cite this

@article{e9878eb1ee78406d938d560ef5045058,

title = "Enhanced light output of vertical GaN-based LEDs with surface roughened by refractive-index-matched Si3N4/GaN nanowire arrays",

abstract = "A surface roughening scheme with Si3N4-coated GaN nanowire (NW) arrays is proposed to improve the light extraction efficiency of GaN-based vertical light-emitting diodes (VLEDs). The scheme allows a graded refractive index that varies from 2.5 (GaN) to 1.9-2.0 (Si3N 4) to 1 (air). Experimental results show that the use of 0.8-μm-long GaN NW arrays coated with a 250-nm-thick Si3N 4 film enhances the light output power by 28.7% at 350mA compared with that of regular VLEDs with a KOH-roughened surface. This enhancement is attributed to the Si3N4/GaN NW arrays effectively releasing total internal reflection and minimizing Fresnel loss.",

author = "Tu, {Yung Chun} and Wang, {Shui Jinn} and Lin, {Guan Yu} and Lin, {Tseng Hsing} and Hung, {Chien Hsiung} and Tsai, {Fu Shou} and Uang, {Kai Ming} and Chen, {Tron Min}",

year = "2014",

month = apr,

doi = "10.7567/APEX.7.042101",

language = "English",

volume = "7",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "4",

}

TY - JOUR

T1 - Enhanced light output of vertical GaN-based LEDs with surface roughened by refractive-index-matched Si3N4/GaN nanowire arrays

AU - Tu, Yung Chun

AU - Wang, Shui Jinn

AU - Lin, Guan Yu

AU - Lin, Tseng Hsing

AU - Hung, Chien Hsiung

AU - Tsai, Fu Shou

AU - Uang, Kai Ming

AU - Chen, Tron Min

PY - 2014/4

Y1 - 2014/4

N2 - A surface roughening scheme with Si3N4-coated GaN nanowire (NW) arrays is proposed to improve the light extraction efficiency of GaN-based vertical light-emitting diodes (VLEDs). The scheme allows a graded refractive index that varies from 2.5 (GaN) to 1.9-2.0 (Si3N 4) to 1 (air). Experimental results show that the use of 0.8-μm-long GaN NW arrays coated with a 250-nm-thick Si3N 4 film enhances the light output power by 28.7% at 350mA compared with that of regular VLEDs with a KOH-roughened surface. This enhancement is attributed to the Si3N4/GaN NW arrays effectively releasing total internal reflection and minimizing Fresnel loss.

AB - A surface roughening scheme with Si3N4-coated GaN nanowire (NW) arrays is proposed to improve the light extraction efficiency of GaN-based vertical light-emitting diodes (VLEDs). The scheme allows a graded refractive index that varies from 2.5 (GaN) to 1.9-2.0 (Si3N 4) to 1 (air). Experimental results show that the use of 0.8-μm-long GaN NW arrays coated with a 250-nm-thick Si3N 4 film enhances the light output power by 28.7% at 350mA compared with that of regular VLEDs with a KOH-roughened surface. This enhancement is attributed to the Si3N4/GaN NW arrays effectively releasing total internal reflection and minimizing Fresnel loss.

UR - http://www.scopus.com/inward/record.url?scp=84904599627&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904599627&partnerID=8YFLogxK

U2 - 10.7567/APEX.7.042101

DO - 10.7567/APEX.7.042101

M3 - Article

AN - SCOPUS:84904599627

SN - 1882-0778

VL - 7

JO - Applied Physics Express

JF - Applied Physics Express

IS - 4

M1 - 042101

ER -

Enhanced light output of vertical GaN-based LEDs with surface roughened by refractive-index-matched Si₃N₄/GaN nanowire arrays

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this