Enhanced light output of vertical-structured GaN-based light-emitting diodes with TiO2/SiO2 reflector and roughened GaO x surface film

Wei Chi Lee, Shui Jinn Wang, Kai Ming Uang, Tron Min Chen, Der Ming Kuo, Pei Ren Wang, Po Hung Wang

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8 Citations (Scopus)


GaN-based thin-film vertical-structured light-emitting diodes (VLEDs) with a GaOx film atop an n-GaN layer roughened via KrF laser irradiation and a TiO2/SiO2 distributed Bragg reflector (DBR) are proposed and investigated. As compared with regular VLEDs with an Al reflector and without a roughened GaOx film, the proposed VLEDs with a chip size of 1mm2 show a typical increase in light output power by 68% at 350mA and by 51% at 750 mA, which is attributed to the enhanced reflectivity and current blocking capability of the DBR layer, the surface roughening with circular GaN protrusions, and the formation of a surface GaOx film by KrF laser irradiation.

Original languageEnglish
Article number04DG06
JournalJapanese journal of applied physics
Issue number4 PART 2
Publication statusPublished - 2011 Apr 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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