Enhanced light output of vertical-structured GaN-based light-emitting diodes with TiO2/SiO2 reflector and roughened GaO x surface film

Wei Chi Lee, Shui Jinn Wang, Kai Ming Uang, Tron Min Chen, Der Ming Kuo, Pei Ren Wang, Po Hung Wang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

GaN-based thin-film vertical-structured light-emitting diodes (VLEDs) with a GaOx film atop an n-GaN layer roughened via KrF laser irradiation and a TiO2/SiO2 distributed Bragg reflector (DBR) are proposed and investigated. As compared with regular VLEDs with an Al reflector and without a roughened GaOx film, the proposed VLEDs with a chip size of 1mm2 show a typical increase in light output power by 68% at 350mA and by 51% at 750 mA, which is attributed to the enhanced reflectivity and current blocking capability of the DBR layer, the surface roughening with circular GaN protrusions, and the formation of a surface GaOx film by KrF laser irradiation.

Original languageEnglish
Article number04DG06
JournalJapanese journal of applied physics
Volume50
Issue number4 PART 2
DOIs
Publication statusPublished - 2011 Apr 1

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reflectors
Light emitting diodes
Distributed Bragg reflectors
light emitting diodes
Bragg reflectors
Laser beam effects
output
irradiation
lasers
chips
reflectance
Thin films
thin films

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lee, Wei Chi ; Wang, Shui Jinn ; Uang, Kai Ming ; Chen, Tron Min ; Kuo, Der Ming ; Wang, Pei Ren ; Wang, Po Hung. / Enhanced light output of vertical-structured GaN-based light-emitting diodes with TiO2/SiO2 reflector and roughened GaO x surface film. In: Japanese journal of applied physics. 2011 ; Vol. 50, No. 4 PART 2.
@article{14912db2dee24240810e734816231900,
title = "Enhanced light output of vertical-structured GaN-based light-emitting diodes with TiO2/SiO2 reflector and roughened GaO x surface film",
abstract = "GaN-based thin-film vertical-structured light-emitting diodes (VLEDs) with a GaOx film atop an n-GaN layer roughened via KrF laser irradiation and a TiO2/SiO2 distributed Bragg reflector (DBR) are proposed and investigated. As compared with regular VLEDs with an Al reflector and without a roughened GaOx film, the proposed VLEDs with a chip size of 1mm2 show a typical increase in light output power by 68{\%} at 350mA and by 51{\%} at 750 mA, which is attributed to the enhanced reflectivity and current blocking capability of the DBR layer, the surface roughening with circular GaN protrusions, and the formation of a surface GaOx film by KrF laser irradiation.",
author = "Lee, {Wei Chi} and Wang, {Shui Jinn} and Uang, {Kai Ming} and Chen, {Tron Min} and Kuo, {Der Ming} and Wang, {Pei Ren} and Wang, {Po Hung}",
year = "2011",
month = "4",
day = "1",
doi = "10.1143/JJAP.50.04DG06",
language = "English",
volume = "50",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
number = "4 PART 2",

}

Enhanced light output of vertical-structured GaN-based light-emitting diodes with TiO2/SiO2 reflector and roughened GaO x surface film. / Lee, Wei Chi; Wang, Shui Jinn; Uang, Kai Ming; Chen, Tron Min; Kuo, Der Ming; Wang, Pei Ren; Wang, Po Hung.

In: Japanese journal of applied physics, Vol. 50, No. 4 PART 2, 04DG06, 01.04.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhanced light output of vertical-structured GaN-based light-emitting diodes with TiO2/SiO2 reflector and roughened GaO x surface film

AU - Lee, Wei Chi

AU - Wang, Shui Jinn

AU - Uang, Kai Ming

AU - Chen, Tron Min

AU - Kuo, Der Ming

AU - Wang, Pei Ren

AU - Wang, Po Hung

PY - 2011/4/1

Y1 - 2011/4/1

N2 - GaN-based thin-film vertical-structured light-emitting diodes (VLEDs) with a GaOx film atop an n-GaN layer roughened via KrF laser irradiation and a TiO2/SiO2 distributed Bragg reflector (DBR) are proposed and investigated. As compared with regular VLEDs with an Al reflector and without a roughened GaOx film, the proposed VLEDs with a chip size of 1mm2 show a typical increase in light output power by 68% at 350mA and by 51% at 750 mA, which is attributed to the enhanced reflectivity and current blocking capability of the DBR layer, the surface roughening with circular GaN protrusions, and the formation of a surface GaOx film by KrF laser irradiation.

AB - GaN-based thin-film vertical-structured light-emitting diodes (VLEDs) with a GaOx film atop an n-GaN layer roughened via KrF laser irradiation and a TiO2/SiO2 distributed Bragg reflector (DBR) are proposed and investigated. As compared with regular VLEDs with an Al reflector and without a roughened GaOx film, the proposed VLEDs with a chip size of 1mm2 show a typical increase in light output power by 68% at 350mA and by 51% at 750 mA, which is attributed to the enhanced reflectivity and current blocking capability of the DBR layer, the surface roughening with circular GaN protrusions, and the formation of a surface GaOx film by KrF laser irradiation.

UR - http://www.scopus.com/inward/record.url?scp=79955421595&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955421595&partnerID=8YFLogxK

U2 - 10.1143/JJAP.50.04DG06

DO - 10.1143/JJAP.50.04DG06

M3 - Article

AN - SCOPUS:79955421595

VL - 50

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 4 PART 2

M1 - 04DG06

ER -