Enhanced luminescence and reduced junction temperature in n-type modulation-doped AlGaInP multiquantum-well light-emitting diodes

Chong Yi Lee, Chih Hung Yen, S. U. Juh-Yuh, Hsen Wen Lin, Wen-Chau Liu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

AlGaInP multiquantum-well (MQW) light-emitting diodes (LEDs), with the n-type modulation-doped (MD) structure, were grown by metal-organic vapor-phase epitaxy. On investigation, these n-type MD-MQW LEDs exhibited a higher luminescence (2.53 lm) and a higher luminous efficiency (16.05 lm/W) than those of conventional LEDs (2.04 lm and 14.49 lm/W, respectively). The junction temperature of the MD-MQW LEDs also showed the benefits of this structure over conventional LEDs with a 14°C reduction achieved at 150mA.

Original languageEnglish
Pages (from-to)4000-4002
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number5 A
DOIs
Publication statusPublished - 2006 May 9

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Light emitting diodes
Luminescence
light emitting diodes
Modulation
luminescence
modulation
Temperature
temperature
Vapor phase epitaxy
vapor phase epitaxy
Metals
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Enhanced luminescence and reduced junction temperature in n-type modulation-doped AlGaInP multiquantum-well light-emitting diodes",
abstract = "AlGaInP multiquantum-well (MQW) light-emitting diodes (LEDs), with the n-type modulation-doped (MD) structure, were grown by metal-organic vapor-phase epitaxy. On investigation, these n-type MD-MQW LEDs exhibited a higher luminescence (2.53 lm) and a higher luminous efficiency (16.05 lm/W) than those of conventional LEDs (2.04 lm and 14.49 lm/W, respectively). The junction temperature of the MD-MQW LEDs also showed the benefits of this structure over conventional LEDs with a 14°C reduction achieved at 150mA.",
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Enhanced luminescence and reduced junction temperature in n-type modulation-doped AlGaInP multiquantum-well light-emitting diodes. / Lee, Chong Yi; Yen, Chih Hung; Juh-Yuh, S. U.; Lin, Hsen Wen; Liu, Wen-Chau.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 5 A, 09.05.2006, p. 4000-4002.

Research output: Contribution to journalArticle

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