Enhanced luminescence and reduced junction temperature in n-type modulation-doped AlGaInP multiquantum-well light-emitting diodes

Chong Yi Lee, Chih Hung Yen, S. U. Juh-Yuh, Hsen Wen Lin, Wen Chau Liu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

AlGaInP multiquantum-well (MQW) light-emitting diodes (LEDs), with the n-type modulation-doped (MD) structure, were grown by metal-organic vapor-phase epitaxy. On investigation, these n-type MD-MQW LEDs exhibited a higher luminescence (2.53 lm) and a higher luminous efficiency (16.05 lm/W) than those of conventional LEDs (2.04 lm and 14.49 lm/W, respectively). The junction temperature of the MD-MQW LEDs also showed the benefits of this structure over conventional LEDs with a 14°C reduction achieved at 150mA.

Original languageEnglish
Pages (from-to)4000-4002
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number5 A
DOIs
Publication statusPublished - 2006 May 9

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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