TY - JOUR
T1 - Enhanced luminescence and reduced junction temperature in n-type modulation-doped AlGaInP multiquantum-well light-emitting diodes
AU - Lee, Chong Yi
AU - Yen, Chih Hung
AU - Juh-Yuh, S. U.
AU - Lin, Hsen Wen
AU - Liu, Wen Chau
PY - 2006/5/9
Y1 - 2006/5/9
N2 - AlGaInP multiquantum-well (MQW) light-emitting diodes (LEDs), with the n-type modulation-doped (MD) structure, were grown by metal-organic vapor-phase epitaxy. On investigation, these n-type MD-MQW LEDs exhibited a higher luminescence (2.53 lm) and a higher luminous efficiency (16.05 lm/W) than those of conventional LEDs (2.04 lm and 14.49 lm/W, respectively). The junction temperature of the MD-MQW LEDs also showed the benefits of this structure over conventional LEDs with a 14°C reduction achieved at 150mA.
AB - AlGaInP multiquantum-well (MQW) light-emitting diodes (LEDs), with the n-type modulation-doped (MD) structure, were grown by metal-organic vapor-phase epitaxy. On investigation, these n-type MD-MQW LEDs exhibited a higher luminescence (2.53 lm) and a higher luminous efficiency (16.05 lm/W) than those of conventional LEDs (2.04 lm and 14.49 lm/W, respectively). The junction temperature of the MD-MQW LEDs also showed the benefits of this structure over conventional LEDs with a 14°C reduction achieved at 150mA.
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U2 - 10.1143/JJAP.45.4000
DO - 10.1143/JJAP.45.4000
M3 - Article
AN - SCOPUS:33646871367
SN - 0021-4922
VL - 45
SP - 4000
EP - 4002
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 5 A
ER -