TY - JOUR
T1 - Enhanced Nitrogen Dioxide Gas-Sensing Performance Using Tantalum Pentoxide-Alloyed Indium Oxide Sensing Membrane
AU - Jian, Li Yi
AU - Lee, Hsin Ying
AU - Lee, Ching Ting
N1 - Funding Information:
Manuscript received April 10, 2019; revised May 23, 2019; accepted May 25, 2019. Date of publication May 28, 2019; date of current version August 15, 2019. This work was supported by the Ministry of Science and Technology of the Republic of China under Grant MOST 105-2221-E-006-171-MY3. The associate editor coordinating the review of this paper and approving it for publication was Dr. Camilla Baratto. (Corresponding author: Ching-Ting Lee.) L.-Y. Jian and H.-Y. Lee are with the Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan.
PY - 2019/9/15
Y1 - 2019/9/15
N2 - In this paper, various tantalum pentoxide-alloyed indium oxide (Ta:In2O3) films were deposited on quartz substrates as the sensing membranes of nitrogen dioxide (NO2) gas sensors using a radio-frequency (RF) magnetron co-sputte-ring system. Using an energy-dispersive spectrometer (EDS), the Ta content in the deposited Ta:In2O3 films was 0, 1.28, 2.33, and 2.98 at.% corresponded to the RF power of 0, 30.0, 37.5, and 45.0 W applied to the tantalum pentoxide (Ta2O5) target, respectively. The grain size of the Ta:In2O3 films calculated from the X-ray diffraction (XRD) results was reduced from 9.9 to 7.6 nm as the Ta content of the Ta:In2O3 films increased from 0 to 2.98 at.%. The associated electron concentration increased from 1.9times 10-{16} cm -{-3} to 1.0times 10-{18} cm -{-3} by increasing the Ta content from 0 to 2.33 at.%. Compared with the indium oxide (In2O3) gas sensors, since the Ta:In2O3 sensing membrane with the Ta content of 2.33 at.% had the lowest activation energy of 0.39 eV, its responsivity was enhanced from 29.8 to 64.5 and the operation temperature was decreased from 150 °C to 120 °C under a NO2 concentration of 100 ppm. Under a NO2 concentration of 100 ppm at an operation temperature of 120 °C, the associated response time and recovery time of the Ta:In2O3 gas sensor with a Ta content of 2.33 at.% were improved to 59 and 339 s, respectively.
AB - In this paper, various tantalum pentoxide-alloyed indium oxide (Ta:In2O3) films were deposited on quartz substrates as the sensing membranes of nitrogen dioxide (NO2) gas sensors using a radio-frequency (RF) magnetron co-sputte-ring system. Using an energy-dispersive spectrometer (EDS), the Ta content in the deposited Ta:In2O3 films was 0, 1.28, 2.33, and 2.98 at.% corresponded to the RF power of 0, 30.0, 37.5, and 45.0 W applied to the tantalum pentoxide (Ta2O5) target, respectively. The grain size of the Ta:In2O3 films calculated from the X-ray diffraction (XRD) results was reduced from 9.9 to 7.6 nm as the Ta content of the Ta:In2O3 films increased from 0 to 2.98 at.%. The associated electron concentration increased from 1.9times 10-{16} cm -{-3} to 1.0times 10-{18} cm -{-3} by increasing the Ta content from 0 to 2.33 at.%. Compared with the indium oxide (In2O3) gas sensors, since the Ta:In2O3 sensing membrane with the Ta content of 2.33 at.% had the lowest activation energy of 0.39 eV, its responsivity was enhanced from 29.8 to 64.5 and the operation temperature was decreased from 150 °C to 120 °C under a NO2 concentration of 100 ppm. Under a NO2 concentration of 100 ppm at an operation temperature of 120 °C, the associated response time and recovery time of the Ta:In2O3 gas sensor with a Ta content of 2.33 at.% were improved to 59 and 339 s, respectively.
UR - http://www.scopus.com/inward/record.url?scp=85071108650&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85071108650&partnerID=8YFLogxK
U2 - 10.1109/JSEN.2019.2919659
DO - 10.1109/JSEN.2019.2919659
M3 - Article
AN - SCOPUS:85071108650
VL - 19
SP - 7829
EP - 7834
JO - IEEE Sensors Journal
JF - IEEE Sensors Journal
SN - 1530-437X
IS - 18
M1 - 8723536
ER -