Enhanced output power for InGaAlP LEDs by contact-transferred and mask-embedded lithography

H. M. Lo, Y. T. Hsieh, S. C. Shei, Y. C. Lee, X. F. Zeng, W. Y. Weng, N. M. Lin, S. J. Chang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The authors applied a simple, low-cost, mass-producible contact-transferred and mask-embedded lithography (CMEL) to texture p-GaP window layer for the fabrication of InGaAlP light-emitting diodes (LEDs) emitting at 612 nm. Under 20 mA current injection, it was found that forward voltages were 2.25, 2.24 and 2.25 V for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively. It was also found that the 20 mA output powers were 1.43, 1.28 and 1.16 mW for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively.

Original languageEnglish
Pages (from-to)358-364
Number of pages7
JournalSuperlattices and Microstructures
Volume48
Issue number4
DOIs
Publication statusPublished - 2010 Oct 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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