Enhanced output power for InGaAlP LEDs by contact-transferred and mask-embedded lithography

H. M. Lo; Y. T. Hsieh; S. C. Shei; Y. C. Lee; X. F. Zeng; W. Y. Weng; N. M. Lin; S. J. Chang

doi:10.1016/j.spmi.2010.08.005

Enhanced output power for InGaAlP LEDs by contact-transferred and mask-embedded lithography

H. M. Lo
, Y. T. Hsieh
, S. C. Shei
, Y. C. Lee
, X. F. Zeng
, W. Y. Weng
, N. M. Lin
, S. J. Chang

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The authors applied a simple, low-cost, mass-producible contact-transferred and mask-embedded lithography (CMEL) to texture p-GaP window layer for the fabrication of InGaAlP light-emitting diodes (LEDs) emitting at 612 nm. Under 20 mA current injection, it was found that forward voltages were 2.25, 2.24 and 2.25 V for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively. It was also found that the 20 mA output powers were 1.43, 1.28 and 1.16 mW for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively.

Original language	English
Pages (from-to)	358-364
Number of pages	7
Journal	Superlattices and Microstructures
Volume	48
Issue number	4
DOIs	https://doi.org/10.1016/j.spmi.2010.08.005
Publication status	Published - 2010 Oct

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2010.08.005

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@article{c97221b8f1e24c0cbddc00a12b036084,

title = "Enhanced output power for InGaAlP LEDs by contact-transferred and mask-embedded lithography",

abstract = "The authors applied a simple, low-cost, mass-producible contact-transferred and mask-embedded lithography (CMEL) to texture p-GaP window layer for the fabrication of InGaAlP light-emitting diodes (LEDs) emitting at 612 nm. Under 20 mA current injection, it was found that forward voltages were 2.25, 2.24 and 2.25 V for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively. It was also found that the 20 mA output powers were 1.43, 1.28 and 1.16 mW for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively.",

author = "Lo, \{H. M.\} and Hsieh, \{Y. T.\} and Shei, \{S. C.\} and Lee, \{Y. C.\} and Zeng, \{X. F.\} and Weng, \{W. Y.\} and Lin, \{N. M.\} and Chang, \{S. J.\}",

note = "Funding Information: This work was granted in part by the Center for Frontier Materials and Micro/Nano Science and Technology , National Cheng Kung University and in part supported by the Advanced Optoelectronic Technology Center , National Cheng Kung University , under projects from the Ministry of Education. This work was also in part supported by the National Science Council of Taiwan through project NSC 96-2628-E-006-079-MY3 . The authors also like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan for financially supporting this research under Contract No. 98-D0204-6 and the LED Lighting and Research Center, NCKU for the assistance regarding related measurements.",

year = "2010",

month = oct,

doi = "10.1016/j.spmi.2010.08.005",

language = "English",

volume = "48",

pages = "358--364",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "4",

}

TY - JOUR

T1 - Enhanced output power for InGaAlP LEDs by contact-transferred and mask-embedded lithography

AU - Lo, H. M.

AU - Hsieh, Y. T.

AU - Shei, S. C.

AU - Lee, Y. C.

AU - Zeng, X. F.

AU - Weng, W. Y.

AU - Lin, N. M.

AU - Chang, S. J.

N1 - Funding Information: This work was granted in part by the Center for Frontier Materials and Micro/Nano Science and Technology , National Cheng Kung University and in part supported by the Advanced Optoelectronic Technology Center , National Cheng Kung University , under projects from the Ministry of Education. This work was also in part supported by the National Science Council of Taiwan through project NSC 96-2628-E-006-079-MY3 . The authors also like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan for financially supporting this research under Contract No. 98-D0204-6 and the LED Lighting and Research Center, NCKU for the assistance regarding related measurements.

PY - 2010/10

Y1 - 2010/10

N2 - The authors applied a simple, low-cost, mass-producible contact-transferred and mask-embedded lithography (CMEL) to texture p-GaP window layer for the fabrication of InGaAlP light-emitting diodes (LEDs) emitting at 612 nm. Under 20 mA current injection, it was found that forward voltages were 2.25, 2.24 and 2.25 V for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively. It was also found that the 20 mA output powers were 1.43, 1.28 and 1.16 mW for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively.

AB - The authors applied a simple, low-cost, mass-producible contact-transferred and mask-embedded lithography (CMEL) to texture p-GaP window layer for the fabrication of InGaAlP light-emitting diodes (LEDs) emitting at 612 nm. Under 20 mA current injection, it was found that forward voltages were 2.25, 2.24 and 2.25 V for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively. It was also found that the 20 mA output powers were 1.43, 1.28 and 1.16 mW for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively.

UR - https://www.scopus.com/pages/publications/77956876607

UR - https://www.scopus.com/pages/publications/77956876607#tab=citedBy

U2 - 10.1016/j.spmi.2010.08.005

DO - 10.1016/j.spmi.2010.08.005

M3 - Article

AN - SCOPUS:77956876607

SN - 0749-6036

VL - 48

SP - 358

EP - 364

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4

ER -

Enhanced output power for InGaAlP LEDs by contact-transferred and mask-embedded lithography

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