Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer

Jinn-Kong Sheu, G. C. Chi, M. J. Jou

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

InGaN-GaN multiple quantum-well (MQW) light-emitting diodes (LEDs) with InGaN current-spreading layer were grown by metal-organic vapor-phase epitaxy (MOVPE) and their characteristics were evaluated by current-voltage (I - V), as well as output power measurements. Experimental results indicate that the LEDs exhibited a higher output power and a lower operation voltage than that of conventional LEDs. The external quantum efficiency of InGaN-GaN MQW LEDs for bare chips operated at injection current of 20 mA with InGaN current spreading layer near 5%. This is two times higher than that of conventional LEDs. This could he tentatively attributed to the better current-spreading effect resulting from Si-doped In0.18Ga0.82 N-wide potential well in which electron states are not quantized.

Original languageEnglish
Pages (from-to)1164-1166
Number of pages3
JournalIEEE Photonics Technology Letters
Volume13
Issue number11
DOIs
Publication statusPublished - 2001 Nov 1

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Light emitting diodes
light emitting diodes
output
Semiconductor quantum wells
quantum wells
Vapor phase epitaxy
Electric potential
electric potential
electron states
Quantum efficiency
vapor phase epitaxy
Electron energy levels
quantum efficiency
Metals
chips
injection
metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

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abstract = "InGaN-GaN multiple quantum-well (MQW) light-emitting diodes (LEDs) with InGaN current-spreading layer were grown by metal-organic vapor-phase epitaxy (MOVPE) and their characteristics were evaluated by current-voltage (I - V), as well as output power measurements. Experimental results indicate that the LEDs exhibited a higher output power and a lower operation voltage than that of conventional LEDs. The external quantum efficiency of InGaN-GaN MQW LEDs for bare chips operated at injection current of 20 mA with InGaN current spreading layer near 5{\%}. This is two times higher than that of conventional LEDs. This could he tentatively attributed to the better current-spreading effect resulting from Si-doped In0.18Ga0.82 N-wide potential well in which electron states are not quantized.",
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Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer. / Sheu, Jinn-Kong; Chi, G. C.; Jou, M. J.

In: IEEE Photonics Technology Letters, Vol. 13, No. 11, 01.11.2001, p. 1164-1166.

Research output: Contribution to journalArticle

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AU - Sheu, Jinn-Kong

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