Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer

J. K. Sheu, G. C. Chi, M. J. Jou

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)

Abstract

InGaN-GaN multiple quantum-well (MQW) light-emitting diodes (LEDs) with InGaN current-spreading layer were grown by metal-organic vapor-phase epitaxy (MOVPE) and their characteristics were evaluated by current-voltage (I - V), as well as output power measurements. Experimental results indicate that the LEDs exhibited a higher output power and a lower operation voltage than that of conventional LEDs. The external quantum efficiency of InGaN-GaN MQW LEDs for bare chips operated at injection current of 20 mA with InGaN current spreading layer near 5%. This is two times higher than that of conventional LEDs. This could he tentatively attributed to the better current-spreading effect resulting from Si-doped In0.18Ga0.82 N-wide potential well in which electron states are not quantized.

Original languageEnglish
Pages (from-to)1164-1166
Number of pages3
JournalIEEE Photonics Technology Letters
Volume13
Issue number11
DOIs
Publication statusPublished - 2001 Nov 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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