Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD

C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang, Y. K. Su

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54 Citations (Scopus)

Abstract

GaN-based light-emitting diodes (LEDs) with naturally textured surfaces grown by MOCVD were demonstrated. In this study, a growth-interruption step and a surface treatment using biscyclopentadienyl magnesium (CP2Mg) were simultaneously performed to form a plurality of nuclei sites on the surface of a p-type cladding layer, and then a p-type contact layer was grown on the p-type cladding layer, so as to create a p-type contact layer with a rough surface having truncated pyramids. Experimental results indicated that GaN-based LED with the truncated pyramids on the surface exhibited an enhancement in output power of 66% at 20 mA. It is worth noting that the typical 20-mA-driven forward voltage is only slightly higher than those of conventional LEDs (without the Mg-treatment process).

Original languageEnglish
Pages (from-to)464-466
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number7
DOIs
Publication statusPublished - 2005 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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