Enhanced performance of a GaN-based LED prepared by an anodized aluminum oxide-nanoporous pattern sapphire substrate

Zong Jie Tsai, Jian Kai Liou, Wen-Chau Liu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A new approach to fabricate a GaN light-emitting diode (LED), grown on an anodized aluminum oxide-nanoporous pattern sapphire substrate (AAO-NPSS), is studied. An AAO film is used as a dry etching mask to transfer nanoporous patterns on the sapphire substrate. Because of the use of AAO-NPSS, threading dislocations could be reduced and air voids would be formed to reflect downward photons toward top direction. As compared with a conventional LED, at 20 mA, the AAO-NPSS-based device exhibits 52.8% enhancements of light output power. The reduced leakage current and lower turn-on voltage are also achieved. Therefore, the use of AAO-NPSS structure could effectively improve the crystalline quality and light extraction efficiency, which certainly leads to the enhanced performance of GaN LEDs.

Original languageEnglish
Article number6531659
Pages (from-to)909-911
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number7
DOIs
Publication statusPublished - 2013

Fingerprint

Aluminum Oxide
Sapphire
Light emitting diodes
Aluminum
Oxides
Substrates
Dry etching
Leakage currents
Masks
Photons
Crystalline materials
Electric potential
Air

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

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abstract = "A new approach to fabricate a GaN light-emitting diode (LED), grown on an anodized aluminum oxide-nanoporous pattern sapphire substrate (AAO-NPSS), is studied. An AAO film is used as a dry etching mask to transfer nanoporous patterns on the sapphire substrate. Because of the use of AAO-NPSS, threading dislocations could be reduced and air voids would be formed to reflect downward photons toward top direction. As compared with a conventional LED, at 20 mA, the AAO-NPSS-based device exhibits 52.8{\%} enhancements of light output power. The reduced leakage current and lower turn-on voltage are also achieved. Therefore, the use of AAO-NPSS structure could effectively improve the crystalline quality and light extraction efficiency, which certainly leads to the enhanced performance of GaN LEDs.",
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Enhanced performance of a GaN-based LED prepared by an anodized aluminum oxide-nanoporous pattern sapphire substrate. / Tsai, Zong Jie; Liou, Jian Kai; Liu, Wen-Chau.

In: IEEE Electron Device Letters, Vol. 34, No. 7, 6531659, 2013, p. 909-911.

Research output: Contribution to journalArticle

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