TY - JOUR
T1 - Enhanced performance of phototransistor memory by optimizing the block copolymer architectures comprising Polyfluorenes and hydrogen-bonded insulating coils
AU - Lin, Chen Fu
AU - Wu, Ya Shuan
AU - Hsieh, Hui Ching
AU - Chen, Wei Cheng
AU - Isono, Takuya
AU - Satoh, Toshifumi
AU - Lin, Yan Cheng
AU - Kuo, Chi Ching
AU - Chen, Wen Chang
N1 - Publisher Copyright:
© 2024 Elsevier Ltd
PY - 2024/3/1
Y1 - 2024/3/1
N2 - Photonic transistor memory, which adopts the structure of a field-effect transistor, combines optical and electronic principles. Conjugated block copolymers (BCPs) are promising electret materials for optoelectronic applications. In this study, a series of BCPs comprising poly[2,7-(9,9-dioctylfluorene)] (PFO: A block) and poly(n-butyl acrylate-random-2-ureido-4[1H]pyrimidinone acrylate) (nBA-r-UPyA: B block), with linear-diblock (AB), branched (AB2), and linear-triblock (BAB) architectures, are synthesized to investigate hydrogen bonding effect stemming from UPyA groups. After thermal annealing, the soft segments of BCPs lead to self-assembled arrangements and smoother morphologies, providing an excellent interface for the deposition of the semiconducting channel layer. Furthermore, forming vertical phase-separated structures through thermal annealing significantly enhances the electron-capture capability. Subsequently, the BCP materials are applied in photonic transistor memory and conducted with electrical characterization. Our study reveals that different compositions of BCP architectures have a corresponding impact on the performance of photonic transistor memory devices. Consequently, AB of PFO-b-P(nBA-r-UPyA)s with a linear-diblock architecture presents an outperforming memory ratio of ∼105, outstanding memory stability over 104 s, and durability to consecutive write/erase processes.
AB - Photonic transistor memory, which adopts the structure of a field-effect transistor, combines optical and electronic principles. Conjugated block copolymers (BCPs) are promising electret materials for optoelectronic applications. In this study, a series of BCPs comprising poly[2,7-(9,9-dioctylfluorene)] (PFO: A block) and poly(n-butyl acrylate-random-2-ureido-4[1H]pyrimidinone acrylate) (nBA-r-UPyA: B block), with linear-diblock (AB), branched (AB2), and linear-triblock (BAB) architectures, are synthesized to investigate hydrogen bonding effect stemming from UPyA groups. After thermal annealing, the soft segments of BCPs lead to self-assembled arrangements and smoother morphologies, providing an excellent interface for the deposition of the semiconducting channel layer. Furthermore, forming vertical phase-separated structures through thermal annealing significantly enhances the electron-capture capability. Subsequently, the BCP materials are applied in photonic transistor memory and conducted with electrical characterization. Our study reveals that different compositions of BCP architectures have a corresponding impact on the performance of photonic transistor memory devices. Consequently, AB of PFO-b-P(nBA-r-UPyA)s with a linear-diblock architecture presents an outperforming memory ratio of ∼105, outstanding memory stability over 104 s, and durability to consecutive write/erase processes.
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U2 - 10.1016/j.polymer.2024.126772
DO - 10.1016/j.polymer.2024.126772
M3 - Article
AN - SCOPUS:85184519667
SN - 0032-3861
VL - 295
JO - polymer
JF - polymer
M1 - 126772
ER -