Enhanced performance of vertical GaN-B ased LEDs with highly reflective p-ohmic contact and periodic indium-zinc-oxide nano-wells

Der Min Kuo, Shui Jinn Wang, Kai Ming Uang, Tron Min Chen, Hon Yi Kuo, Wei Chi Lee, Pei Ren Wang

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Through the use of polystyrene nano-spheres as a 2-D mask for the patterned-deposition of indium-zinc-oxide (IZO) and annealed Pt-Al-Pt as a high reflectivity p-ohmic/mirror layer, vertical GaN-LEDs with atop periodic IZO nano-wells (NW-VLEDs) were fabricated. At 350 mA, NW-VLEDs exhibited a crucial VF reduction of 0.1 V with an enhancement of 87% in light output and 92% in power conversion efficiency as compared to regular vertical GaN-LEDs, which should be attributed to the combination of the effectiveness of high-reflectivity ohmic contact, IZO current spreading layer, and the enhanced light extraction efficiency from the periodic nano-wells.

Original languageEnglish
Article number5378587
Pages (from-to)338-340
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number5
DOIs
Publication statusPublished - 2010 Mar 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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