Enhanced performance of vertical GaN-B ased LEDs with highly reflective p-ohmic contact and periodic indium-zinc-oxide nano-wells

Der Min Kuo; Shui Jinn Wang; Kai Ming Uang; Tron Min Chen; Hon Yi Kuo; Wei Chi Lee; Pei Ren Wang

doi:10.1109/LPT.2009.2039641

Enhanced performance of vertical GaN-B ased LEDs with highly reflective p-ohmic contact and periodic indium-zinc-oxide nano-wells

Der Min Kuo, Shui Jinn Wang, Kai Ming Uang, Tron Min Chen, Hon Yi Kuo, Wei Chi Lee, Pei Ren Wang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Through the use of polystyrene nano-spheres as a 2-D mask for the patterned-deposition of indium-zinc-oxide (IZO) and annealed Pt-Al-Pt as a high reflectivity p-ohmic/mirror layer, vertical GaN-LEDs with atop periodic IZO nano-wells (NW-VLEDs) were fabricated. At 350 mA, NW-VLEDs exhibited a crucial VF reduction of 0.1 V with an enhancement of 87% in light output and 92% in power conversion efficiency as compared to regular vertical GaN-LEDs, which should be attributed to the combination of the effectiveness of high-reflectivity ohmic contact, IZO current spreading layer, and the enhanced light extraction efficiency from the periodic nano-wells.

Original language	English
Article number	5378587
Pages (from-to)	338-340
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	5
DOIs	https://doi.org/10.1109/LPT.2009.2039641
Publication status	Published - 2010 Mar 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2009.2039641

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title = "Enhanced performance of vertical GaN-B ased LEDs with highly reflective p-ohmic contact and periodic indium-zinc-oxide nano-wells",

abstract = "Through the use of polystyrene nano-spheres as a 2-D mask for the patterned-deposition of indium-zinc-oxide (IZO) and annealed Pt-Al-Pt as a high reflectivity p-ohmic/mirror layer, vertical GaN-LEDs with atop periodic IZO nano-wells (NW-VLEDs) were fabricated. At 350 mA, NW-VLEDs exhibited a crucial VF reduction of 0.1 V with an enhancement of 87% in light output and 92% in power conversion efficiency as compared to regular vertical GaN-LEDs, which should be attributed to the combination of the effectiveness of high-reflectivity ohmic contact, IZO current spreading layer, and the enhanced light extraction efficiency from the periodic nano-wells.",

author = "Kuo, {Der Min} and Wang, {Shui Jinn} and Uang, {Kai Ming} and Chen, {Tron Min} and Kuo, {Hon Yi} and Lee, {Wei Chi} and Wang, {Pei Ren}",

note = "Funding Information: Manuscript received October 21, 2009; revised December 09, 2009; accepted December 22, 2009. First published January 12, 2010; current version published February 10, 2010. This work was supported in part by the National Science Council of Taiwan, Republic of China, under Grant NSC 96-2221-E-006-081-MY2, Grant NSC 97-2221-E-274-013, and Grant NSC 96-2221-E-006-285-MY3, and by the Landmark Project Grant for NCKU{\textquoteright}s Top-University Project.",

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doi = "10.1109/LPT.2009.2039641",

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T1 - Enhanced performance of vertical GaN-B ased LEDs with highly reflective p-ohmic contact and periodic indium-zinc-oxide nano-wells

AU - Kuo, Der Min

AU - Wang, Shui Jinn

AU - Uang, Kai Ming

AU - Chen, Tron Min

AU - Kuo, Hon Yi

AU - Lee, Wei Chi

AU - Wang, Pei Ren

N1 - Funding Information: Manuscript received October 21, 2009; revised December 09, 2009; accepted December 22, 2009. First published January 12, 2010; current version published February 10, 2010. This work was supported in part by the National Science Council of Taiwan, Republic of China, under Grant NSC 96-2221-E-006-081-MY2, Grant NSC 97-2221-E-274-013, and Grant NSC 96-2221-E-006-285-MY3, and by the Landmark Project Grant for NCKU’s Top-University Project.

PY - 2010/3/1

Y1 - 2010/3/1

N2 - Through the use of polystyrene nano-spheres as a 2-D mask for the patterned-deposition of indium-zinc-oxide (IZO) and annealed Pt-Al-Pt as a high reflectivity p-ohmic/mirror layer, vertical GaN-LEDs with atop periodic IZO nano-wells (NW-VLEDs) were fabricated. At 350 mA, NW-VLEDs exhibited a crucial VF reduction of 0.1 V with an enhancement of 87% in light output and 92% in power conversion efficiency as compared to regular vertical GaN-LEDs, which should be attributed to the combination of the effectiveness of high-reflectivity ohmic contact, IZO current spreading layer, and the enhanced light extraction efficiency from the periodic nano-wells.

AB - Through the use of polystyrene nano-spheres as a 2-D mask for the patterned-deposition of indium-zinc-oxide (IZO) and annealed Pt-Al-Pt as a high reflectivity p-ohmic/mirror layer, vertical GaN-LEDs with atop periodic IZO nano-wells (NW-VLEDs) were fabricated. At 350 mA, NW-VLEDs exhibited a crucial VF reduction of 0.1 V with an enhancement of 87% in light output and 92% in power conversion efficiency as compared to regular vertical GaN-LEDs, which should be attributed to the combination of the effectiveness of high-reflectivity ohmic contact, IZO current spreading layer, and the enhanced light extraction efficiency from the periodic nano-wells.

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Enhanced performance of vertical GaN-B ased LEDs with highly reflective p-ohmic contact and periodic indium-zinc-oxide nano-wells

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