Through the use of polystyrene nano-spheres as a 2-D mask for the patterned-deposition of indium-zinc-oxide (IZO) and annealed Pt-Al-Pt as a high reflectivity p-ohmic/mirror layer, vertical GaN-LEDs with atop periodic IZO nano-wells (NW-VLEDs) were fabricated. At 350 mA, NW-VLEDs exhibited a crucial VF reduction of 0.1 V with an enhancement of 87% in light output and 92% in power conversion efficiency as compared to regular vertical GaN-LEDs, which should be attributed to the combination of the effectiveness of high-reflectivity ohmic contact, IZO current spreading layer, and the enhanced light extraction efficiency from the periodic nano-wells.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering