Enhanced performance of vertical GaN-B ased LEDs with highly reflective p-ohmic contact and periodic indium-zinc-oxide nano-wells

Der Min Kuo, Shui-Jinn Wang, Kai Ming Uang, Tron Min Chen, Hon Yi Kuo, Wei Chi Lee, Pei Ren Wang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Through the use of polystyrene nano-spheres as a 2-D mask for the patterned-deposition of indium-zinc-oxide (IZO) and annealed Pt-Al-Pt as a high reflectivity p-ohmic/mirror layer, vertical GaN-LEDs with atop periodic IZO nano-wells (NW-VLEDs) were fabricated. At 350 mA, NW-VLEDs exhibited a crucial VF reduction of 0.1 V with an enhancement of 87% in light output and 92% in power conversion efficiency as compared to regular vertical GaN-LEDs, which should be attributed to the combination of the effectiveness of high-reflectivity ohmic contact, IZO current spreading layer, and the enhanced light extraction efficiency from the periodic nano-wells.

Original languageEnglish
Article number5378587
Pages (from-to)338-340
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number5
DOIs
Publication statusPublished - 2010 Mar 1

Fingerprint

Zinc Oxide
Indium
Ohmic contacts
Zinc oxide
zinc oxides
indium oxides
Light emitting diodes
electric contacts
light emitting diodes
reflectance
Polystyrenes
Conversion efficiency
Masks
polystyrene
Mirrors
masks
mirrors
augmentation
output

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Kuo, Der Min ; Wang, Shui-Jinn ; Uang, Kai Ming ; Chen, Tron Min ; Kuo, Hon Yi ; Lee, Wei Chi ; Wang, Pei Ren. / Enhanced performance of vertical GaN-B ased LEDs with highly reflective p-ohmic contact and periodic indium-zinc-oxide nano-wells. In: IEEE Photonics Technology Letters. 2010 ; Vol. 22, No. 5. pp. 338-340.
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abstract = "Through the use of polystyrene nano-spheres as a 2-D mask for the patterned-deposition of indium-zinc-oxide (IZO) and annealed Pt-Al-Pt as a high reflectivity p-ohmic/mirror layer, vertical GaN-LEDs with atop periodic IZO nano-wells (NW-VLEDs) were fabricated. At 350 mA, NW-VLEDs exhibited a crucial VF reduction of 0.1 V with an enhancement of 87{\%} in light output and 92{\%} in power conversion efficiency as compared to regular vertical GaN-LEDs, which should be attributed to the combination of the effectiveness of high-reflectivity ohmic contact, IZO current spreading layer, and the enhanced light extraction efficiency from the periodic nano-wells.",
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Enhanced performance of vertical GaN-B ased LEDs with highly reflective p-ohmic contact and periodic indium-zinc-oxide nano-wells. / Kuo, Der Min; Wang, Shui-Jinn; Uang, Kai Ming; Chen, Tron Min; Kuo, Hon Yi; Lee, Wei Chi; Wang, Pei Ren.

In: IEEE Photonics Technology Letters, Vol. 22, No. 5, 5378587, 01.03.2010, p. 338-340.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Kuo, Der Min

AU - Wang, Shui-Jinn

AU - Uang, Kai Ming

AU - Chen, Tron Min

AU - Kuo, Hon Yi

AU - Lee, Wei Chi

AU - Wang, Pei Ren

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AB - Through the use of polystyrene nano-spheres as a 2-D mask for the patterned-deposition of indium-zinc-oxide (IZO) and annealed Pt-Al-Pt as a high reflectivity p-ohmic/mirror layer, vertical GaN-LEDs with atop periodic IZO nano-wells (NW-VLEDs) were fabricated. At 350 mA, NW-VLEDs exhibited a crucial VF reduction of 0.1 V with an enhancement of 87% in light output and 92% in power conversion efficiency as compared to regular vertical GaN-LEDs, which should be attributed to the combination of the effectiveness of high-reflectivity ohmic contact, IZO current spreading layer, and the enhanced light extraction efficiency from the periodic nano-wells.

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