Enhanced performance of vertical GaN-Based light-emitting diodes with a current-blocking layer and electroplated nickel substrate

Kai Ming Uang, Shui Jinn Wang, Chen Tron-Min Chen, Wei Chi Lee, Shiue Lung Chen, Yu Yu Wang, Hon Kuan

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11 Citations (Scopus)

Abstract

The performance of vertical-structure metallic-substrate GaN-based light-emitting diodes (VM-LEDs) with a patterned SiO2 film as the current-blocking layer (CBL) was investigated. From theoretical calculations of current and light distributions and experimental results on current-voltage (I-V) and light output power-current (L-I) characteristics, we found that SiO2 CBL inserted under the n-pad electrode increases light output power by 35.4% at 20mA as compared with VM-LEDs without CBL. Such an improvement is attributed to the insulated CBL structure, which provides better current spreading and less photon absorption and/or reflection at the n-electrode.

Original languageEnglish
Pages (from-to)1021011-1021014
Number of pages4
JournalJapanese journal of applied physics
Volume48
Issue number10 Part 1
DOIs
Publication statusPublished - 2009 Dec 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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