Abstract
The performance of vertical-structure metallic-substrate GaN-based light-emitting diodes (VM-LEDs) with a patterned SiO2 film as the current-blocking layer (CBL) was investigated. From theoretical calculations of current and light distributions and experimental results on current-voltage (I-V) and light output power-current (L-I) characteristics, we found that SiO2 CBL inserted under the n-pad electrode increases light output power by 35.4% at 20mA as compared with VM-LEDs without CBL. Such an improvement is attributed to the insulated CBL structure, which provides better current spreading and less photon absorption and/or reflection at the n-electrode.
Original language | English |
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Pages (from-to) | 1021011-1021014 |
Number of pages | 4 |
Journal | Japanese journal of applied physics |
Volume | 48 |
Issue number | 10 Part 1 |
DOIs | |
Publication status | Published - 2009 |
All Science Journal Classification (ASJC) codes
- General Engineering
- General Physics and Astronomy