Enhanced performances of AlGaN/GaN ion-sensitive field-effect transistors using H₂O₂-grown Al₂O₃ for sensing membrane and surface passivation applications

Engineering & Materials Science

• Ion sensitive field effect transistors 100%
• Passivation 77%
• Aluminum oxide 61%
• Membranes 54%
• Oxidation 22%
• Surface potential 17%
• Heterojunctions 16%
• Transconductance 15%
• Contact angle 14%
• Hysteresis 12%
• Transistors 10%

Physics & Astronomy

• passivity 59%
• field effect transistors 50%
• membranes 46%
• ions 29%
• performance 28%
• oxidation 23%
• sensitivity 18%
• transconductance 17%
• transistors 12%
• hysteresis 12%