Abstract
A two-step channel In0.1Ga0.9As/In0.25Ga0.75As heterostructure real-space transfer transistor grown by low-pressure metalorgonic chemical vapor deposition is implemented. By virtue of δ doping, shallow ohmic contacts and two-step channel, a high peak-to-valley current ratio up to 260 000 at 300 K can be obtained at low collector voltage (Vc=3 V). Moreover, from Shubnikov-de Haas (SdH) measurements, we observe a positive persistent-photoconductivity effect and variations of quantum lifetime. The SdH result is in good agreement with the critical drained-to-source onset voltage of negative differential resistance.
Original language | English |
---|---|
Pages (from-to) | 4076-4080 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 82 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1997 Oct 15 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy