Selectively multiple δ- doped GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructures grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for improving two-dimensional electron gas (2DEG) concentrations and mobilities were demonstrated. All the multiple δ- doped structures revealed significantly higher 2DEG concentration and mobility than those of single δ- doped and conventional homogeneously doped GaAs/InGaAs structures. The structure with double δ- doped GaAs layers grown symmetrically on both sides of the channel showed extremely high 2DEG concentrations of 6.2(4.1)×1012 cm-2 and mobilities of 4630(19100) cm2/v· s at 300(77) K. Meanwhile, a peak extrinsic transconductance of 390 mS/mm, maximum effective saturation current density of 880 mA/mm, with broad and high transconductance region at 300 K, were achieved in this symmetrically δ- doped GaAs structure.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)