Enhanced vertical emission from GaN based light emitting diode with ZnO nanorod arrays produced by hydrothermal method

Saikat Dalui, Chih Chien Lin, Hsin Ying Lee, Ching Ting Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, we analyzed the modulated light output from the GaN based light emitting diodes (LEDs) with the incorporation of ZnO nanorod by hydrothermal method. With the ZnO nanorod, the light output from the LEDs increased by 20.2% at an injection current of 100mA and more interestingly, output power was more concentrated in a smaller escape cone of ∼ θ=30° than that of conventional LEDs with a cone of ∼ θ=42°. Surface damaging of LEDs was also avoided by the low temperature hydrothermal growth of ZnO nanorod arrays which was evident as there was no significant change in I-V characteristics for both the cases.

Original languageEnglish
Title of host publicationState-of-the-Art Program on Compound Semiconductors 51, SOTAPOCS 51 and Wide-Bandgap Semiconductor Materials and Devices 10
Pages49-53
Number of pages5
Edition12
DOIs
Publication statusPublished - 2009 Dec 1
EventState-of-the-Art Program on Compound Semiconductors 51, SOTAPOCS 51 and Wide-Bandgap Semiconductor Materials and Devices 10 - 216th ECS Meeting - Vienna, Austria
Duration: 2009 Oct 42009 Oct 9

Publication series

NameECS Transactions
Number12
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherState-of-the-Art Program on Compound Semiconductors 51, SOTAPOCS 51 and Wide-Bandgap Semiconductor Materials and Devices 10 - 216th ECS Meeting
CountryAustria
CityVienna
Period09-10-0409-10-09

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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