Enhanced vertical emission from GaN based light emitting diode with ZnO nanorod arrays produced by hydrothermal method

Saikat Dalui; Chih Chien Lin; Hsin Ying Lee; Ching Ting Lee

doi:10.1149/1.3238206

Enhanced vertical emission from GaN based light emitting diode with ZnO nanorod arrays produced by hydrothermal method

Saikat Dalui, Chih Chien Lin, Hsin Ying Lee, Ching Ting Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this study, we analyzed the modulated light output from the GaN based light emitting diodes (LEDs) with the incorporation of ZnO nanorod by hydrothermal method. With the ZnO nanorod, the light output from the LEDs increased by 20.2% at an injection current of 100mA and more interestingly, output power was more concentrated in a smaller escape cone of ∼ θ=30° than that of conventional LEDs with a cone of ∼ θ=42°. Surface damaging of LEDs was also avoided by the low temperature hydrothermal growth of ZnO nanorod arrays which was evident as there was no significant change in I-V characteristics for both the cases.

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors 51, SOTAPOCS 51 and Wide-Bandgap Semiconductor Materials and Devices 10
Publisher	Electrochemical Society Inc.
Pages	49-53
Number of pages	5
Edition	12
ISBN (Electronic)	9781566777490
ISBN (Print)	9781566777490
DOIs	https://doi.org/10.1149/1.3238206
Publication status	Published - 2009

Publication series

Name	ECS Transactions
Number	12
Volume	25
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/1.3238206

Cite this

Dalui, S., Lin, C. C., Lee, H. Y., & Lee, C. T. (2009). Enhanced vertical emission from GaN based light emitting diode with ZnO nanorod arrays produced by hydrothermal method. In State-of-the-Art Program on Compound Semiconductors 51, SOTAPOCS 51 and Wide-Bandgap Semiconductor Materials and Devices 10 (12 ed., pp. 49-53). (ECS Transactions; Vol. 25, No. 12). Electrochemical Society Inc.. https://doi.org/10.1149/1.3238206

Dalui, Saikat ; Lin, Chih Chien ; Lee, Hsin Ying et al. / Enhanced vertical emission from GaN based light emitting diode with ZnO nanorod arrays produced by hydrothermal method. State-of-the-Art Program on Compound Semiconductors 51, SOTAPOCS 51 and Wide-Bandgap Semiconductor Materials and Devices 10. 12. ed. Electrochemical Society Inc., 2009. pp. 49-53 (ECS Transactions; 12).

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title = "Enhanced vertical emission from GaN based light emitting diode with ZnO nanorod arrays produced by hydrothermal method",

abstract = "In this study, we analyzed the modulated light output from the GaN based light emitting diodes (LEDs) with the incorporation of ZnO nanorod by hydrothermal method. With the ZnO nanorod, the light output from the LEDs increased by 20.2% at an injection current of 100mA and more interestingly, output power was more concentrated in a smaller escape cone of ∼ θ=30° than that of conventional LEDs with a cone of ∼ θ=42°. Surface damaging of LEDs was also avoided by the low temperature hydrothermal growth of ZnO nanorod arrays which was evident as there was no significant change in I-V characteristics for both the cases.",

author = "Saikat Dalui and Lin, {Chih Chien} and Lee, {Hsin Ying} and Lee, {Ching Ting}",

year = "2009",

doi = "10.1149/1.3238206",

language = "English",

isbn = "9781566777490",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

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pages = "49--53",

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Dalui, S, Lin, CC, Lee, HY & Lee, CT 2009, Enhanced vertical emission from GaN based light emitting diode with ZnO nanorod arrays produced by hydrothermal method. in State-of-the-Art Program on Compound Semiconductors 51, SOTAPOCS 51 and Wide-Bandgap Semiconductor Materials and Devices 10. 12 edn, ECS Transactions, no. 12, vol. 25, Electrochemical Society Inc., pp. 49-53. https://doi.org/10.1149/1.3238206

Enhanced vertical emission from GaN based light emitting diode with ZnO nanorod arrays produced by hydrothermal method. / Dalui, Saikat; Lin, Chih Chien; Lee, Hsin Ying et al.
State-of-the-Art Program on Compound Semiconductors 51, SOTAPOCS 51 and Wide-Bandgap Semiconductor Materials and Devices 10. 12. ed. Electrochemical Society Inc., 2009. p. 49-53 (ECS Transactions; Vol. 25, No. 12).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - In this study, we analyzed the modulated light output from the GaN based light emitting diodes (LEDs) with the incorporation of ZnO nanorod by hydrothermal method. With the ZnO nanorod, the light output from the LEDs increased by 20.2% at an injection current of 100mA and more interestingly, output power was more concentrated in a smaller escape cone of ∼ θ=30° than that of conventional LEDs with a cone of ∼ θ=42°. Surface damaging of LEDs was also avoided by the low temperature hydrothermal growth of ZnO nanorod arrays which was evident as there was no significant change in I-V characteristics for both the cases.

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Dalui S, Lin CC, Lee HY , Lee CT. Enhanced vertical emission from GaN based light emitting diode with ZnO nanorod arrays produced by hydrothermal method. In State-of-the-Art Program on Compound Semiconductors 51, SOTAPOCS 51 and Wide-Bandgap Semiconductor Materials and Devices 10. 12 ed. Electrochemical Society Inc. 2009. p. 49-53. (ECS Transactions; 12). doi: 10.1149/1.3238206

Enhanced vertical emission from GaN based light emitting diode with ZnO nanorod arrays produced by hydrothermal method

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