Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads

J. K. Sheu, I. Hsiu Hung, W. C. Lai, S. C. Shei, M. L. Lee

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)

Abstract

In this study, we demonstrate a GaN-based light-emitting diode (LED) with nonalloyed metal contacts onto the n+ -GaN surface and transparent contact layer (indium tin oxide) to serve as the n -type electrode (cathode) and the p -type electrode pad (anode), respectively. Comparing with the conventional LEDs, which the electrode pads and/or Ohmic contacts form through conventional CrAu metal contacts, the nonalloyed metal contacts (AgCrAu or AlCrAu) used in the present experimental blue LEDs also play the role of reflector to prevent the emitted light from absorption by the opaque electrode pads with low reflectivity (CrAu). With an injection current of 20 mA, the enhancement in the light output power has approximately a 14% magnitude compared to the GaN-based LEDs without Ag or Al reflectors under the CrAu electrode pads.

Original languageEnglish
Article number103507
JournalApplied Physics Letters
Volume93
Issue number10
DOIs
Publication statusPublished - 2008 Sep 19

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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