Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads

Jinn-Kong Sheu, I. Hsiu Hung, Wei-Chi Lai, S. C. Shei, M. L. Lee

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

In this study, we demonstrate a GaN-based light-emitting diode (LED) with nonalloyed metal contacts onto the n+ -GaN surface and transparent contact layer (indium tin oxide) to serve as the n -type electrode (cathode) and the p -type electrode pad (anode), respectively. Comparing with the conventional LEDs, which the electrode pads and/or Ohmic contacts form through conventional CrAu metal contacts, the nonalloyed metal contacts (AgCrAu or AlCrAu) used in the present experimental blue LEDs also play the role of reflector to prevent the emitted light from absorption by the opaque electrode pads with low reflectivity (CrAu). With an injection current of 20 mA, the enhancement in the light output power has approximately a 14% magnitude compared to the GaN-based LEDs without Ag or Al reflectors under the CrAu electrode pads.

Original languageEnglish
Article number103507
JournalApplied Physics Letters
Volume93
Issue number10
DOIs
Publication statusPublished - 2008 Sep 19

Fingerprint

gallium nitrides
reflectors
light emitting diodes
electric contacts
electrodes
augmentation
output
metals
indium oxides
tin oxides
anodes
cathodes
injection
reflectance

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{74319dbc691c41bbbaaac85bd6ad3023,
title = "Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads",
abstract = "In this study, we demonstrate a GaN-based light-emitting diode (LED) with nonalloyed metal contacts onto the n+ -GaN surface and transparent contact layer (indium tin oxide) to serve as the n -type electrode (cathode) and the p -type electrode pad (anode), respectively. Comparing with the conventional LEDs, which the electrode pads and/or Ohmic contacts form through conventional CrAu metal contacts, the nonalloyed metal contacts (AgCrAu or AlCrAu) used in the present experimental blue LEDs also play the role of reflector to prevent the emitted light from absorption by the opaque electrode pads with low reflectivity (CrAu). With an injection current of 20 mA, the enhancement in the light output power has approximately a 14{\%} magnitude compared to the GaN-based LEDs without Ag or Al reflectors under the CrAu electrode pads.",
author = "Jinn-Kong Sheu and Hung, {I. Hsiu} and Wei-Chi Lai and Shei, {S. C.} and Lee, {M. L.}",
year = "2008",
month = "9",
day = "19",
doi = "10.1063/1.2980422",
language = "English",
volume = "93",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads. / Sheu, Jinn-Kong; Hung, I. Hsiu; Lai, Wei-Chi; Shei, S. C.; Lee, M. L.

In: Applied Physics Letters, Vol. 93, No. 10, 103507, 19.09.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads

AU - Sheu, Jinn-Kong

AU - Hung, I. Hsiu

AU - Lai, Wei-Chi

AU - Shei, S. C.

AU - Lee, M. L.

PY - 2008/9/19

Y1 - 2008/9/19

N2 - In this study, we demonstrate a GaN-based light-emitting diode (LED) with nonalloyed metal contacts onto the n+ -GaN surface and transparent contact layer (indium tin oxide) to serve as the n -type electrode (cathode) and the p -type electrode pad (anode), respectively. Comparing with the conventional LEDs, which the electrode pads and/or Ohmic contacts form through conventional CrAu metal contacts, the nonalloyed metal contacts (AgCrAu or AlCrAu) used in the present experimental blue LEDs also play the role of reflector to prevent the emitted light from absorption by the opaque electrode pads with low reflectivity (CrAu). With an injection current of 20 mA, the enhancement in the light output power has approximately a 14% magnitude compared to the GaN-based LEDs without Ag or Al reflectors under the CrAu electrode pads.

AB - In this study, we demonstrate a GaN-based light-emitting diode (LED) with nonalloyed metal contacts onto the n+ -GaN surface and transparent contact layer (indium tin oxide) to serve as the n -type electrode (cathode) and the p -type electrode pad (anode), respectively. Comparing with the conventional LEDs, which the electrode pads and/or Ohmic contacts form through conventional CrAu metal contacts, the nonalloyed metal contacts (AgCrAu or AlCrAu) used in the present experimental blue LEDs also play the role of reflector to prevent the emitted light from absorption by the opaque electrode pads with low reflectivity (CrAu). With an injection current of 20 mA, the enhancement in the light output power has approximately a 14% magnitude compared to the GaN-based LEDs without Ag or Al reflectors under the CrAu electrode pads.

UR - http://www.scopus.com/inward/record.url?scp=51749097087&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51749097087&partnerID=8YFLogxK

U2 - 10.1063/1.2980422

DO - 10.1063/1.2980422

M3 - Article

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 103507

ER -