Enhancement-mode In0.52Al0.48As/ln 0.6Ga0.4As tunneling real space transfer high electron mobility transistor

Yen Wei Chen, Yeong Jia Chen, Wei Chou Hsu, Rong Tay Hsu, Yue Huei Wu, Yu Shyan Lin

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

An enhancement-mode In0.52Al0.48As/In 0.6Ga0.4As tunneling real-space transfer high-electron mobility transistor (HEMT) was discussed. The study was carried out by thinning the InAlAs barrier layer , where the gate recess depth was changed for controlling the threshold voltage. The channel current was totally pinched off after the Schottky gate was formed and the enhancement-mode operation was manifested. It was found that when the gate was sufficiently large, the device exhibits a N-shaped negative differential resistance (NDR) behavior since hot electron tunnel from the InGaAs channel layer to the gate electrode.

Original languageEnglish
Pages (from-to)974-976
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number3
Publication statusPublished - 2004 May 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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