TY - GEN
T1 - Enhancement-mode pseudomorphic high-electron-mobility transistor with a nanoscale oxidized GaAs gate
AU - Lee, Kuan Wei
AU - Lin, Hsien Cheng
AU - Wang, Yeong Her
PY - 2012/12/1
Y1 - 2012/12/1
N2 - This study examines the feasibility of an enhancement-mode (E-mode) pseudomorphic high-electron-mobility transistor (PHEMT) with a nanoscale oxidized GaAs gate using liquid phase oxidation (LPO). Using LPO, the threshold voltage (Vth) can be shifted positively. Results indicated a reduced leakage current, a higher breakdown voltage, and an improved subthreshold swing compared to those of the Schottky-gate PHEMT. Therefore, LPO did not degrade the DC performance of the device.
AB - This study examines the feasibility of an enhancement-mode (E-mode) pseudomorphic high-electron-mobility transistor (PHEMT) with a nanoscale oxidized GaAs gate using liquid phase oxidation (LPO). Using LPO, the threshold voltage (Vth) can be shifted positively. Results indicated a reduced leakage current, a higher breakdown voltage, and an improved subthreshold swing compared to those of the Schottky-gate PHEMT. Therefore, LPO did not degrade the DC performance of the device.
UR - http://www.scopus.com/inward/record.url?scp=84873143258&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84873143258&partnerID=8YFLogxK
U2 - 10.1109/ICIPRM.2012.6403317
DO - 10.1109/ICIPRM.2012.6403317
M3 - Conference contribution
AN - SCOPUS:84873143258
SN - 9781467317252
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SP - 54
EP - 56
BT - 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012
T2 - 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012
Y2 - 27 August 2012 through 30 August 2012
ER -