Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications

Yi Ping Huang, Wei Chou Hsu, Han Yin Liu, Ching Sung Lee

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

This letter demonstrates a novel enhancement-mode (E-mode) tri-gate nanowire InAlN/GaN MOSHEMT with ultrasonic spray pyrolysis deposition (USPD) deposited Al2O3 as the gate dielectric layer. The proposed device reveals a threshold voltage (VTH) of +2.3 V and a maximum drain current (ID,max) of 705 mA/mm. It also exhibits superior electrical performances, including a high ON-state/OFF-state current (ION/IOFF) ratio of 109-1010, a steep subthreshold swing (SS) of 65 mV/decade, and a large breakdown voltage (BV) of 800 V with a leakage current of 0.7 uA/mm while keeping a low-specific ON-resistance (RON,sp) of 1.04m-cm2. This novel E-mode device presents a great potential for power device applications.

Original languageEnglish
Article number8693634
Pages (from-to)929-932
Number of pages4
JournalIEEE Electron Device Letters
Volume40
Issue number6
DOIs
Publication statusPublished - 2019 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications'. Together they form a unique fingerprint.

Cite this