TY - JOUR
T1 - Enhancement of c-Axis Oriented Aluminum Nitride Films via Low Temperature DC Sputtering
AU - Chen, Ze Hui
AU - Li, Chengying
AU - Chen, Yueh Han
AU - Chu, Shengyuan
AU - Tsai, Cheng Che
AU - Hong, Cheng Shong
N1 - Funding Information:
Manuscript received November 9, 2020; revised January 5, 2021, March 2, 2021, and April 13, 2021; accepted April 29, 2021. Date of publication May 4, 2021; date of current version August 13, 2021. This work was supported by the Ministry of Science and Technology (MOST), Taiwan, under Grant MOST 107-2218-E-006-035 and Grant MOST 108-2218-E-006 -013. The associate editor coordinating the review of this article and approving it for publication was Prof. Tien-Kan Chung. (Corresponding author: Shengyuan Chu.) Ze-Hui Chen is with the Master Degree Program on Nano-Integrated-Circuit Engineering, National Cheng Kung University, Tainan 701, Taiwan (e-mail: [email protected]).
Publisher Copyright:
© 2001-2012 IEEE.
PY - 2021/8/15
Y1 - 2021/8/15
N2 - In this study, we successfully deposit c-axis oriented aluminum nitride (AlN) piezoelectric films at low temperature (100 °C) via the DC sputtering method with tilt gun. The X-ray diffraction (XRD) observations prove that the deposited films have a c-axis preferred orientation. Effective d33 value of the proposed films is 5.92 pm/V, which is better than most of the reported data using DC sputtering or other processing methods. It is found that the gun placed at 25° helped the films to rearrange at low temperature and c-axis orientation AlN films were successfully grown at 100 °C. This temperature is much lower than the reported growing temperature. It means the piezoelectric films can be deposited at flexible substrate and the photoresist can be stable at this temperature. The cantilever beam type microelectromechanical systems (MEMS) piezoelectric accelerometers are then fabricated based on the proposed AlN films with a lift-off process. The results show that the responsivity of the proposed devices is 8.12 mV/g, and the resonance frequency is 460 Hz, which indicates they can be used for machine tools.
AB - In this study, we successfully deposit c-axis oriented aluminum nitride (AlN) piezoelectric films at low temperature (100 °C) via the DC sputtering method with tilt gun. The X-ray diffraction (XRD) observations prove that the deposited films have a c-axis preferred orientation. Effective d33 value of the proposed films is 5.92 pm/V, which is better than most of the reported data using DC sputtering or other processing methods. It is found that the gun placed at 25° helped the films to rearrange at low temperature and c-axis orientation AlN films were successfully grown at 100 °C. This temperature is much lower than the reported growing temperature. It means the piezoelectric films can be deposited at flexible substrate and the photoresist can be stable at this temperature. The cantilever beam type microelectromechanical systems (MEMS) piezoelectric accelerometers are then fabricated based on the proposed AlN films with a lift-off process. The results show that the responsivity of the proposed devices is 8.12 mV/g, and the resonance frequency is 460 Hz, which indicates they can be used for machine tools.
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U2 - 10.1109/JSEN.2021.3077274
DO - 10.1109/JSEN.2021.3077274
M3 - Article
AN - SCOPUS:85105853331
SN - 1530-437X
VL - 21
SP - 17673
EP - 17677
JO - IEEE Sensors Journal
JF - IEEE Sensors Journal
IS - 16
M1 - 9422823
ER -