Enhancement of carrier transport characteristic in the Sb2Se2Te topological insulators by N2 adsorption

Shiu Ming Huang; Shih Jhe Huang; Ching Hsu; Paritosh V. Wadekar; You Jhih Yan; Shih Hsun Yu; Mitch Chou

doi:10.1038/s41598-017-05369-y

Enhancement of carrier transport characteristic in the Sb₂Se₂Te topological insulators by N₂ adsorption

Shiu Ming Huang
, Shih Jhe Huang
, Ching Hsu
, Paritosh V. Wadekar
, You Jhih Yan
, Shih Hsun Yu
, Mitch Chou

Program on Key Materials

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The carrier transport characteristics of Sb₂Se₂Te topological insulators were investigated, after exposure to different levels of nitrogen gas. The magnetoresistance (MR) slope for the Sb₂Se₂Te crystal increased by approximately 100% at 10 K after 2-days of exposure. The Shubnikov-de Haas (SdH) oscillation amplitude increased by 30% while oscillation frequencies remained the same. MR slopes and the mobilities had the same dependency on temperature over a wide temperature range. All measured data conformed to a linear correlation between MR slope and mobility, supporting our hypothesis that the MR increase and the SdH oscillation enhancement might be caused by mobility enhancement induced by adsorbed N₂ molecular.

Original language	English
Article number	5133
Journal	Scientific reports
Volume	7
Issue number	1
DOIs	https://doi.org/10.1038/s41598-017-05369-y
Publication status	Published - 2017 Dec 1

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title = "Enhancement of carrier transport characteristic in the Sb2Se2Te topological insulators by N2 adsorption",

abstract = "The carrier transport characteristics of Sb2Se2Te topological insulators were investigated, after exposure to different levels of nitrogen gas. The magnetoresistance (MR) slope for the Sb2Se2Te crystal increased by approximately 100\% at 10 K after 2-days of exposure. The Shubnikov-de Haas (SdH) oscillation amplitude increased by 30\% while oscillation frequencies remained the same. MR slopes and the mobilities had the same dependency on temperature over a wide temperature range. All measured data conformed to a linear correlation between MR slope and mobility, supporting our hypothesis that the MR increase and the SdH oscillation enhancement might be caused by mobility enhancement induced by adsorbed N2 molecular.",

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T1 - Enhancement of carrier transport characteristic in the Sb2Se2Te topological insulators by N2 adsorption

AU - Huang, Shiu Ming

AU - Huang, Shih Jhe

AU - Hsu, Ching

AU - Wadekar, Paritosh V.

AU - Yan, You Jhih

AU - Yu, Shih Hsun

AU - Chou, Mitch

PY - 2017/12/1

Y1 - 2017/12/1

N2 - The carrier transport characteristics of Sb2Se2Te topological insulators were investigated, after exposure to different levels of nitrogen gas. The magnetoresistance (MR) slope for the Sb2Se2Te crystal increased by approximately 100% at 10 K after 2-days of exposure. The Shubnikov-de Haas (SdH) oscillation amplitude increased by 30% while oscillation frequencies remained the same. MR slopes and the mobilities had the same dependency on temperature over a wide temperature range. All measured data conformed to a linear correlation between MR slope and mobility, supporting our hypothesis that the MR increase and the SdH oscillation enhancement might be caused by mobility enhancement induced by adsorbed N2 molecular.

AB - The carrier transport characteristics of Sb2Se2Te topological insulators were investigated, after exposure to different levels of nitrogen gas. The magnetoresistance (MR) slope for the Sb2Se2Te crystal increased by approximately 100% at 10 K after 2-days of exposure. The Shubnikov-de Haas (SdH) oscillation amplitude increased by 30% while oscillation frequencies remained the same. MR slopes and the mobilities had the same dependency on temperature over a wide temperature range. All measured data conformed to a linear correlation between MR slope and mobility, supporting our hypothesis that the MR increase and the SdH oscillation enhancement might be caused by mobility enhancement induced by adsorbed N2 molecular.

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Enhancement of carrier transport characteristic in the Sb₂Se₂Te topological insulators by N₂ adsorption

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