Enhancement of exchange coupling between GaMnAs and IrMn with self-organized Mn(Ga)As at the interface

H. T. Lin; Y. F. Chen; P. W. Huang; S. H. Wang; J. H. Huang; C. H. Lai; W. N. Lee; T. S. Chin

doi:10.1063/1.2410234

Enhancement of exchange coupling between GaMnAs and IrMn with self-organized Mn(Ga)As at the interface

H. T. Lin, Y. F. Chen, P. W. Huang, S. H. Wang, J. H. Huang, C. H. Lai, W. N. Lee, T. S. Chin

Department of Physics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

An atomically flat and uniform reaction layer of Mn(Ga)As was found to self-organize at the (Ga,Mn) AsIrMn interface by postannealing. The Mn(Ga)As layer exhibits strong ferromagnetic characteristics up to the measured 300 K. In particular, the manifested horizontal shift of field-cooled hysteresis loops shows a clear signature of exchange bias attributable to the exchange coupling between IrMn and Mn(Ga)As. Implication from composition analyses, exchange-bias effect, and thickness dependence of the Mn(Ga)As layer versus annealing conditions is also discussed.

Original language	English
Article number	262502
Journal	Applied Physics Letters
Volume	89
Issue number	26
DOIs	https://doi.org/10.1063/1.2410234
Publication status	Published - 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2410234

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title = "Enhancement of exchange coupling between GaMnAs and IrMn with self-organized Mn(Ga)As at the interface",

abstract = "An atomically flat and uniform reaction layer of Mn(Ga)As was found to self-organize at the (Ga,Mn) AsIrMn interface by postannealing. The Mn(Ga)As layer exhibits strong ferromagnetic characteristics up to the measured 300 K. In particular, the manifested horizontal shift of field-cooled hysteresis loops shows a clear signature of exchange bias attributable to the exchange coupling between IrMn and Mn(Ga)As. Implication from composition analyses, exchange-bias effect, and thickness dependence of the Mn(Ga)As layer versus annealing conditions is also discussed.",

author = "Lin, {H. T.} and Chen, {Y. F.} and Huang, {P. W.} and Wang, {S. H.} and Huang, {J. H.} and Lai, {C. H.} and Lee, {W. N.} and Chin, {T. S.}",

note = "Funding Information: The authors are grateful to the National Science Council of Taiwan for sponsoring this research under the grants NSC 94-2120-M-007-012.",

year = "2006",

doi = "10.1063/1.2410234",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "26",

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TY - JOUR

T1 - Enhancement of exchange coupling between GaMnAs and IrMn with self-organized Mn(Ga)As at the interface

AU - Lin, H. T.

AU - Chen, Y. F.

AU - Huang, P. W.

AU - Wang, S. H.

AU - Huang, J. H.

AU - Lai, C. H.

AU - Lee, W. N.

AU - Chin, T. S.

N1 - Funding Information: The authors are grateful to the National Science Council of Taiwan for sponsoring this research under the grants NSC 94-2120-M-007-012.

PY - 2006

Y1 - 2006

N2 - An atomically flat and uniform reaction layer of Mn(Ga)As was found to self-organize at the (Ga,Mn) AsIrMn interface by postannealing. The Mn(Ga)As layer exhibits strong ferromagnetic characteristics up to the measured 300 K. In particular, the manifested horizontal shift of field-cooled hysteresis loops shows a clear signature of exchange bias attributable to the exchange coupling between IrMn and Mn(Ga)As. Implication from composition analyses, exchange-bias effect, and thickness dependence of the Mn(Ga)As layer versus annealing conditions is also discussed.

AB - An atomically flat and uniform reaction layer of Mn(Ga)As was found to self-organize at the (Ga,Mn) AsIrMn interface by postannealing. The Mn(Ga)As layer exhibits strong ferromagnetic characteristics up to the measured 300 K. In particular, the manifested horizontal shift of field-cooled hysteresis loops shows a clear signature of exchange bias attributable to the exchange coupling between IrMn and Mn(Ga)As. Implication from composition analyses, exchange-bias effect, and thickness dependence of the Mn(Ga)As layer versus annealing conditions is also discussed.

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U2 - 10.1063/1.2410234

DO - 10.1063/1.2410234

M3 - Article

AN - SCOPUS:33846092190

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 262502

ER -

Enhancement of exchange coupling between GaMnAs and IrMn with self-organized Mn(Ga)As at the interface

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