Abstract
An atomically flat and uniform reaction layer of Mn(Ga)As was found to self-organize at the (Ga,Mn) AsIrMn interface by postannealing. The Mn(Ga)As layer exhibits strong ferromagnetic characteristics up to the measured 300 K. In particular, the manifested horizontal shift of field-cooled hysteresis loops shows a clear signature of exchange bias attributable to the exchange coupling between IrMn and Mn(Ga)As. Implication from composition analyses, exchange-bias effect, and thickness dependence of the Mn(Ga)As layer versus annealing conditions is also discussed.
Original language | English |
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Article number | 262502 |
Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 26 |
DOIs | |
Publication status | Published - 2006 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)