Enhancement of exchange coupling between GaMnAs and IrMn with self-organized Mn(Ga)As at the interface

H. T. Lin, Y. F. Chen, P. W. Huang, S. H. Wang, J. H. Huang, C. H. Lai, W. N. Lee, T. S. Chin

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

An atomically flat and uniform reaction layer of Mn(Ga)As was found to self-organize at the (Ga,Mn) AsIrMn interface by postannealing. The Mn(Ga)As layer exhibits strong ferromagnetic characteristics up to the measured 300 K. In particular, the manifested horizontal shift of field-cooled hysteresis loops shows a clear signature of exchange bias attributable to the exchange coupling between IrMn and Mn(Ga)As. Implication from composition analyses, exchange-bias effect, and thickness dependence of the Mn(Ga)As layer versus annealing conditions is also discussed.

Original languageEnglish
Article number262502
JournalApplied Physics Letters
Volume89
Issue number26
DOIs
Publication statusPublished - 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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