Enhancement of growth rate due to tin doping in GaAs epilayer grown by low pressure metal-organic chemical vapor deposition

C. Y. Chang; M. K. Lee; Y. K. Su; W. C. Hsu

doi:10.1063/1.332690

Enhancement of growth rate due to tin doping in GaAs epilayer grown by low pressure metal-organic chemical vapor deposition

C. Y. Chang, M. K. Lee, Y. K. Su, W. C. Hsu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Tetraethyltin is used as an n-type dopant in homoepitaxially growing GaAs films from triethylgallium and arsine vapor in a low pressure system. The experimental data show that the growth rate can be enhanced by tin doping. It is found that the deep level transient spectroscopy concentration of the electron trap located at about 0.8 eV below the conduction band is suppressed by Sn doping. Gallium vacancy may be attributed to the trap. A growth model has been proposed, which can be substantiated by the experimental results.

Original language	English
Pages (from-to)	5464-5465
Number of pages	2
Journal	Journal of Applied Physics
Volume	54
Issue number	9
DOIs	https://doi.org/10.1063/1.332690
Publication status	Published - 1983

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.332690

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abstract = "Tetraethyltin is used as an n-type dopant in homoepitaxially growing GaAs films from triethylgallium and arsine vapor in a low pressure system. The experimental data show that the growth rate can be enhanced by tin doping. It is found that the deep level transient spectroscopy concentration of the electron trap located at about 0.8 eV below the conduction band is suppressed by Sn doping. Gallium vacancy may be attributed to the trap. A growth model has been proposed, which can be substantiated by the experimental results.",

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AU - Chang, C. Y.

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AU - Su, Y. K.

AU - Hsu, W. C.

PY - 1983

Y1 - 1983

N2 - Tetraethyltin is used as an n-type dopant in homoepitaxially growing GaAs films from triethylgallium and arsine vapor in a low pressure system. The experimental data show that the growth rate can be enhanced by tin doping. It is found that the deep level transient spectroscopy concentration of the electron trap located at about 0.8 eV below the conduction band is suppressed by Sn doping. Gallium vacancy may be attributed to the trap. A growth model has been proposed, which can be substantiated by the experimental results.

AB - Tetraethyltin is used as an n-type dopant in homoepitaxially growing GaAs films from triethylgallium and arsine vapor in a low pressure system. The experimental data show that the growth rate can be enhanced by tin doping. It is found that the deep level transient spectroscopy concentration of the electron trap located at about 0.8 eV below the conduction band is suppressed by Sn doping. Gallium vacancy may be attributed to the trap. A growth model has been proposed, which can be substantiated by the experimental results.

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Enhancement of growth rate due to tin doping in GaAs epilayer grown by low pressure metal-organic chemical vapor deposition

Abstract

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