Enhancement of hot-carrier-induced degradation in ultra-thin gate oxide pMOSFETs stressed under high gate voltage

J. F. Chen; C. P. Tsao; T. C. Ong

doi:10.1049/el:20020450

Enhancement of hot-carrier-induced degradation in ultra-thin gate oxide pMOSFETs stressed under high gate voltage

J. F. Chen, C. P. Tsao, T. C. Ong

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Enhanced hot-carrier-induced drain current degradation is observed in ultra-thin gate oxide pMOSFETs stressed under high gate voltage. Electron tunnelling from the gate plus an Auger-recombination-assisted hot hole energy gain process is responsible for this phenomenon. This enhancement in drain current degradation is more severe for devices with thinner gate oxide or devices stressed under lower drain voltage.

Original language	English
Pages (from-to)	658-660
Number of pages	3
Journal	Electronics Letters
Volume	38
Issue number	13
DOIs	https://doi.org/10.1049/el:20020450
Publication status	Published - 2002 Jun 20

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20020450

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abstract = "Enhanced hot-carrier-induced drain current degradation is observed in ultra-thin gate oxide pMOSFETs stressed under high gate voltage. Electron tunnelling from the gate plus an Auger-recombination-assisted hot hole energy gain process is responsible for this phenomenon. This enhancement in drain current degradation is more severe for devices with thinner gate oxide or devices stressed under lower drain voltage.",

author = "Chen, {J. F.} and Tsao, {C. P.} and Ong, {T. C.}",

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AU - Ong, T. C.

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Y1 - 2002/6/20

N2 - Enhanced hot-carrier-induced drain current degradation is observed in ultra-thin gate oxide pMOSFETs stressed under high gate voltage. Electron tunnelling from the gate plus an Auger-recombination-assisted hot hole energy gain process is responsible for this phenomenon. This enhancement in drain current degradation is more severe for devices with thinner gate oxide or devices stressed under lower drain voltage.

AB - Enhanced hot-carrier-induced drain current degradation is observed in ultra-thin gate oxide pMOSFETs stressed under high gate voltage. Electron tunnelling from the gate plus an Auger-recombination-assisted hot hole energy gain process is responsible for this phenomenon. This enhancement in drain current degradation is more severe for devices with thinner gate oxide or devices stressed under lower drain voltage.

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Enhancement of hot-carrier-induced degradation in ultra-thin gate oxide pMOSFETs stressed under high gate voltage

Abstract

All Science Journal Classification (ASJC) codes

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