Enhancement of hot-carrier-induced degradation in ultra-thin gate oxide pMOSFETs stressed under high gate voltage

Jone-Fang Chen, C. P. Tsao, T. C. Ong

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Enhanced hot-carrier-induced drain current degradation is observed in ultra-thin gate oxide pMOSFETs stressed under high gate voltage. Electron tunnelling from the gate plus an Auger-recombination-assisted hot hole energy gain process is responsible for this phenomenon. This enhancement in drain current degradation is more severe for devices with thinner gate oxide or devices stressed under lower drain voltage.

Original languageEnglish
Pages (from-to)658-660
Number of pages3
JournalElectronics Letters
Volume38
Issue number13
DOIs
Publication statusPublished - 2002 Jun 20

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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