Enhanced hot-carrier-induced drain current degradation is observed in ultra-thin gate oxide pMOSFETs stressed under high gate voltage. Electron tunnelling from the gate plus an Auger-recombination-assisted hot hole energy gain process is responsible for this phenomenon. This enhancement in drain current degradation is more severe for devices with thinner gate oxide or devices stressed under lower drain voltage.
|Number of pages||3|
|Publication status||Published - 2002 Jun 20|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering