Enhancement of Hydrogen Sensing Performance of a Pd Nanoparticle/Pd Film/GaOx/GaN-Based Metal-Oxide- Semiconductor Diode

Bu Yuan Ke, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


A new Pd nanoparticle (NP)/Pd film/GaOx/GaN-based metal-oxide-semiconductor diode hydrogen sensor is fabricated and studied. In this paper, appropriate photochemical drop coating and an H2O2 surface treatment were used to form Pd NPs and a GaOx dielectric layer. The Pd NPs increased the surface area/volume ratio, and the presence of GaOx layer led to the effective dissociation of hydrogen molecules. The improved hydrogen sensing properties include a very high sensing response of 1.24 × 107 (in 1% H2/air gas at 300 K) and an extremely low detection level (≤1 ppm H2/air). Furthermore, based on a kinetic adsorption analysis, the activation energy was only 13.1 KJ · mol-1 that is beneficial for hydrogen sensing. The proposed device is therefore promising for high-performance hydrogen sensing applications.

Original languageEnglish
Article number8450052
Pages (from-to)4577-4584
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number10
Publication statusPublished - 2018 Oct

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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