TY - JOUR
T1 - Enhancement of Hydrogen Sensing Performance of a Pd Nanoparticle/Pd Film/GaOx/GaN-Based Metal-Oxide- Semiconductor Diode
AU - Ke, Bu Yuan
AU - Liu, Wen Chau
N1 - Funding Information:
Manuscript received May 28, 2018; revised July 10, 2018; accepted August 13, 2018. Date of publication August 29, 2018; date of current version September 20, 2018. This work was supported in part by the Ministry of Science and Technology of China under Contract MOST-106-2221-E-006-224 and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University. The review of this paper was arranged by Editor I. Kymissis. (Corresponding author: Wen-Chau Liu.) The authors are with the Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan 70101, Taiwan (e-mail: [email protected]).
Publisher Copyright:
© 2018 IEEE.
PY - 2018/10
Y1 - 2018/10
N2 - A new Pd nanoparticle (NP)/Pd film/GaOx/GaN-based metal-oxide-semiconductor diode hydrogen sensor is fabricated and studied. In this paper, appropriate photochemical drop coating and an H2O2 surface treatment were used to form Pd NPs and a GaOx dielectric layer. The Pd NPs increased the surface area/volume ratio, and the presence of GaOx layer led to the effective dissociation of hydrogen molecules. The improved hydrogen sensing properties include a very high sensing response of 1.24 × 107 (in 1% H2/air gas at 300 K) and an extremely low detection level (≤1 ppm H2/air). Furthermore, based on a kinetic adsorption analysis, the activation energy was only 13.1 KJ · mol-1 that is beneficial for hydrogen sensing. The proposed device is therefore promising for high-performance hydrogen sensing applications.
AB - A new Pd nanoparticle (NP)/Pd film/GaOx/GaN-based metal-oxide-semiconductor diode hydrogen sensor is fabricated and studied. In this paper, appropriate photochemical drop coating and an H2O2 surface treatment were used to form Pd NPs and a GaOx dielectric layer. The Pd NPs increased the surface area/volume ratio, and the presence of GaOx layer led to the effective dissociation of hydrogen molecules. The improved hydrogen sensing properties include a very high sensing response of 1.24 × 107 (in 1% H2/air gas at 300 K) and an extremely low detection level (≤1 ppm H2/air). Furthermore, based on a kinetic adsorption analysis, the activation energy was only 13.1 KJ · mol-1 that is beneficial for hydrogen sensing. The proposed device is therefore promising for high-performance hydrogen sensing applications.
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U2 - 10.1109/TED.2018.2865793
DO - 10.1109/TED.2018.2865793
M3 - Article
AN - SCOPUS:85052639855
SN - 0018-9383
VL - 65
SP - 4577
EP - 4584
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 10
M1 - 8450052
ER -