Enhancement of LED light-extraction efficiency by anodic oxidation

Chien Chun Wang, Wei Lun Lu, Te Chi Yen, Chien Chih Liu, Chang Hsin Chu, Yeong-Her Wang, Mau-phon Houng

Research output: Contribution to journalConference article

Abstract

In this work, the enhancement of light-extraction efficiency for AlInGaP-based light-emitting diodes (LEDs) by using porous alumina is proposed. The employment of the porous alumina increases the total power by 6.35%, while the optical spectrum is unchanged. By nano-texturing the thin-film surface, it is much easier for light to escape from porous alumina light-emitting diodes (PA-LEDs). The pore distances about 25-80 nm under anodized voltage ranges of 10-30 V in the sulfuric acid. Besides, nanopores of porous alumina also can be enlarged (∼0.8nm/per min) in the phosphoric acid. The diameter of the nanopores (20-60nm) and the interpore distance (25-80nm) can be modulated by anodic parameters. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)217-221
Number of pages5
JournalECS Transactions
Volume2
Issue number5
DOIs
Publication statusPublished - 2006 Dec 1
EventState-of-the-Art Program on Compound Semiconductors XLIV 209th Electrochemical Society Meeting - Denver, CO, United States
Duration: 2006 May 72006 May 12

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Anodic oxidation
Light emitting diodes
Alumina
Nanopores
Texturing
Phosphoric acid
Sulfuric acid
Thin films
Electric potential

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Wang, Chien Chun ; Lu, Wei Lun ; Yen, Te Chi ; Liu, Chien Chih ; Chu, Chang Hsin ; Wang, Yeong-Her ; Houng, Mau-phon. / Enhancement of LED light-extraction efficiency by anodic oxidation. In: ECS Transactions. 2006 ; Vol. 2, No. 5. pp. 217-221.
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abstract = "In this work, the enhancement of light-extraction efficiency for AlInGaP-based light-emitting diodes (LEDs) by using porous alumina is proposed. The employment of the porous alumina increases the total power by 6.35{\%}, while the optical spectrum is unchanged. By nano-texturing the thin-film surface, it is much easier for light to escape from porous alumina light-emitting diodes (PA-LEDs). The pore distances about 25-80 nm under anodized voltage ranges of 10-30 V in the sulfuric acid. Besides, nanopores of porous alumina also can be enlarged (∼0.8nm/per min) in the phosphoric acid. The diameter of the nanopores (20-60nm) and the interpore distance (25-80nm) can be modulated by anodic parameters. copyright The Electrochemical Society.",
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Enhancement of LED light-extraction efficiency by anodic oxidation. / Wang, Chien Chun; Lu, Wei Lun; Yen, Te Chi; Liu, Chien Chih; Chu, Chang Hsin; Wang, Yeong-Her; Houng, Mau-phon.

In: ECS Transactions, Vol. 2, No. 5, 01.12.2006, p. 217-221.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Enhancement of LED light-extraction efficiency by anodic oxidation

AU - Wang, Chien Chun

AU - Lu, Wei Lun

AU - Yen, Te Chi

AU - Liu, Chien Chih

AU - Chu, Chang Hsin

AU - Wang, Yeong-Her

AU - Houng, Mau-phon

PY - 2006/12/1

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AB - In this work, the enhancement of light-extraction efficiency for AlInGaP-based light-emitting diodes (LEDs) by using porous alumina is proposed. The employment of the porous alumina increases the total power by 6.35%, while the optical spectrum is unchanged. By nano-texturing the thin-film surface, it is much easier for light to escape from porous alumina light-emitting diodes (PA-LEDs). The pore distances about 25-80 nm under anodized voltage ranges of 10-30 V in the sulfuric acid. Besides, nanopores of porous alumina also can be enlarged (∼0.8nm/per min) in the phosphoric acid. The diameter of the nanopores (20-60nm) and the interpore distance (25-80nm) can be modulated by anodic parameters. copyright The Electrochemical Society.

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