Abstract
In this work, the enhancement of light-extraction efficiency for AlInGaP-based light-emitting diodes (LEDs) by using porous alumina is proposed. The employment of the porous alumina increases the total power by 6.35%, while the optical spectrum is unchanged. By nano-texturing the thin-film surface, it is much easier for light to escape from porous alumina light-emitting diodes (PA-LEDs). The pore distances about 25-80 nm under anodized voltage ranges of 10-30 V in the sulfuric acid. Besides, nanopores of porous alumina also can be enlarged (∼0.8nm/per min) in the phosphoric acid. The diameter of the nanopores (20-60nm) and the interpore distance (25-80nm) can be modulated by anodic parameters. copyright The Electrochemical Society.
| Original language | English |
|---|---|
| Pages (from-to) | 217-221 |
| Number of pages | 5 |
| Journal | ECS Transactions |
| Volume | 2 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2006 Dec 1 |
| Event | State-of-the-Art Program on Compound Semiconductors XLIV 209th Electrochemical Society Meeting - Denver, CO, United States Duration: 2006 May 7 → 2006 May 12 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
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Enhancement of LED light-extraction efficiency by anodic oxidation. / Wang, Chien Chun; Lu, Wei Lun; Yen, Te Chi; Liu, Chien Chih; Chu, Chang Hsin; Wang, Yeong-Her; Houng, Mau-phon.
In: ECS Transactions, Vol. 2, No. 5, 01.12.2006, p. 217-221.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Enhancement of LED light-extraction efficiency by anodic oxidation
AU - Wang, Chien Chun
AU - Lu, Wei Lun
AU - Yen, Te Chi
AU - Liu, Chien Chih
AU - Chu, Chang Hsin
AU - Wang, Yeong-Her
AU - Houng, Mau-phon
PY - 2006/12/1
Y1 - 2006/12/1
N2 - In this work, the enhancement of light-extraction efficiency for AlInGaP-based light-emitting diodes (LEDs) by using porous alumina is proposed. The employment of the porous alumina increases the total power by 6.35%, while the optical spectrum is unchanged. By nano-texturing the thin-film surface, it is much easier for light to escape from porous alumina light-emitting diodes (PA-LEDs). The pore distances about 25-80 nm under anodized voltage ranges of 10-30 V in the sulfuric acid. Besides, nanopores of porous alumina also can be enlarged (∼0.8nm/per min) in the phosphoric acid. The diameter of the nanopores (20-60nm) and the interpore distance (25-80nm) can be modulated by anodic parameters. copyright The Electrochemical Society.
AB - In this work, the enhancement of light-extraction efficiency for AlInGaP-based light-emitting diodes (LEDs) by using porous alumina is proposed. The employment of the porous alumina increases the total power by 6.35%, while the optical spectrum is unchanged. By nano-texturing the thin-film surface, it is much easier for light to escape from porous alumina light-emitting diodes (PA-LEDs). The pore distances about 25-80 nm under anodized voltage ranges of 10-30 V in the sulfuric acid. Besides, nanopores of porous alumina also can be enlarged (∼0.8nm/per min) in the phosphoric acid. The diameter of the nanopores (20-60nm) and the interpore distance (25-80nm) can be modulated by anodic parameters. copyright The Electrochemical Society.
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U2 - 10.1149/1.2204894
DO - 10.1149/1.2204894
M3 - Conference article
VL - 2
SP - 217
EP - 221
JO - ECS Transactions
JF - ECS Transactions
SN - 1938-5862
IS - 5
ER -