In this work, the enhancement of light-extraction efficiency for AlInGaP-based light-emitting diodes (LEDs) by using porous alumina is proposed. The employment of the porous alumina increases the total power by 6.35%, while the optical spectrum is unchanged. By nano-texturing the thin-film surface, it is much easier for light to escape from porous alumina light-emitting diodes (PA-LEDs). The pore distances about 25-80 nm under anodized voltage ranges of 10-30 V in the sulfuric acid. Besides, nanopores of porous alumina also can be enlarged (∼0.8nm/per min) in the phosphoric acid. The diameter of the nanopores (20-60nm) and the interpore distance (25-80nm) can be modulated by anodic parameters. copyright The Electrochemical Society.
|Number of pages||5|
|Publication status||Published - 2006 Dec 1|
|Event||State-of-the-Art Program on Compound Semiconductors XLIV 209th Electrochemical Society Meeting - Denver, CO, United States|
Duration: 2006 May 7 → 2006 May 12
All Science Journal Classification (ASJC) codes