Enhancement of LED light-extraction efficiency by anodic oxidation

Chien Chun Wang; Wei Lun Lu; Te Chi Yen; Chien Chih Liu; Chang Hsin Chu; Yeong Her Wang; Mau Phon Houng

doi:10.1149/1.2204894

Enhancement of LED light-extraction efficiency by anodic oxidation

Chien Chun Wang, Wei Lun Lu, Te Chi Yen, Chien Chih Liu, Chang Hsin Chu, Yeong Her Wang, Mau Phon Houng

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this work, the enhancement of light-extraction efficiency for AlInGaP-based light-emitting diodes (LEDs) by using porous alumina is proposed. The employment of the porous alumina increases the total power by 6.35%, while the optical spectrum is unchanged. By nano-texturing the thin-film surface, it is much easier for light to escape from porous alumina light-emitting diodes (PA-LEDs). The pore distances about 25-80 nm under anodized voltage ranges of 10-30 V in the sulfuric acid. Besides, nanopores of porous alumina also can be enlarged (∼0.8nm/per min) in the phosphoric acid. The diameter of the nanopores (20-60nm) and the interpore distance (25-80nm) can be modulated by anodic parameters. copyright The Electrochemical Society.

Original language	English
Pages (from-to)	217-221
Number of pages	5
Journal	ECS Transactions
Volume	2
Issue number	5
DOIs	https://doi.org/10.1149/1.2204894
Publication status	Published - 2006 Dec 1
Event	State-of-the-Art Program on Compound Semiconductors XLIV 209th Electrochemical Society Meeting - Denver, CO, United States Duration: 2006 May 7 → 2006 May 12

All Science Journal Classification (ASJC) codes

Engineering(all)

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@article{9661a6367020447d9d7df12bdc5b7305,

title = "Enhancement of LED light-extraction efficiency by anodic oxidation",

abstract = "In this work, the enhancement of light-extraction efficiency for AlInGaP-based light-emitting diodes (LEDs) by using porous alumina is proposed. The employment of the porous alumina increases the total power by 6.35%, while the optical spectrum is unchanged. By nano-texturing the thin-film surface, it is much easier for light to escape from porous alumina light-emitting diodes (PA-LEDs). The pore distances about 25-80 nm under anodized voltage ranges of 10-30 V in the sulfuric acid. Besides, nanopores of porous alumina also can be enlarged (∼0.8nm/per min) in the phosphoric acid. The diameter of the nanopores (20-60nm) and the interpore distance (25-80nm) can be modulated by anodic parameters. copyright The Electrochemical Society.",

author = "Wang, {Chien Chun} and Lu, {Wei Lun} and Yen, {Te Chi} and Liu, {Chien Chih} and Chu, {Chang Hsin} and Wang, {Yeong Her} and Houng, {Mau Phon}",

year = "2006",

month = dec,

day = "1",

doi = "10.1149/1.2204894",

language = "English",

volume = "2",

pages = "217--221",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society, Inc.",

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note = "State-of-the-Art Program on Compound Semiconductors XLIV 209th Electrochemical Society Meeting ; Conference date: 07-05-2006 Through 12-05-2006",

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T1 - Enhancement of LED light-extraction efficiency by anodic oxidation

AU - Wang, Chien Chun

AU - Lu, Wei Lun

AU - Yen, Te Chi

AU - Liu, Chien Chih

AU - Chu, Chang Hsin

AU - Wang, Yeong Her

AU - Houng, Mau Phon

PY - 2006/12/1

Y1 - 2006/12/1

N2 - In this work, the enhancement of light-extraction efficiency for AlInGaP-based light-emitting diodes (LEDs) by using porous alumina is proposed. The employment of the porous alumina increases the total power by 6.35%, while the optical spectrum is unchanged. By nano-texturing the thin-film surface, it is much easier for light to escape from porous alumina light-emitting diodes (PA-LEDs). The pore distances about 25-80 nm under anodized voltage ranges of 10-30 V in the sulfuric acid. Besides, nanopores of porous alumina also can be enlarged (∼0.8nm/per min) in the phosphoric acid. The diameter of the nanopores (20-60nm) and the interpore distance (25-80nm) can be modulated by anodic parameters. copyright The Electrochemical Society.

AB - In this work, the enhancement of light-extraction efficiency for AlInGaP-based light-emitting diodes (LEDs) by using porous alumina is proposed. The employment of the porous alumina increases the total power by 6.35%, while the optical spectrum is unchanged. By nano-texturing the thin-film surface, it is much easier for light to escape from porous alumina light-emitting diodes (PA-LEDs). The pore distances about 25-80 nm under anodized voltage ranges of 10-30 V in the sulfuric acid. Besides, nanopores of porous alumina also can be enlarged (∼0.8nm/per min) in the phosphoric acid. The diameter of the nanopores (20-60nm) and the interpore distance (25-80nm) can be modulated by anodic parameters. copyright The Electrochemical Society.

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