Enhancement of terahertz radiation in semiconductors induced by conjugated polymer

J. S. Hwang, H. C. Lin, Y. C. Huang, K. I. Lin, J. W. Chang, T. F. Guo

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Terahertz radiation (THz) from the surfaces of various semiconductor wafers and microstructures is studied. The intensities of THz radiation from the surfaces of certain semiconductors with a thin layer of conjugate polymer [2, 3-dibutoxy-1, 4-poly(phenylene vinylene)] deposited on their surfaces is greatly enhanced. The enhancement of THz radiation depends on the mechanism used to induct the THz radiation. Modulation spectroscopy of photoreflectance is employed to investigate the change in the built-in electric field and surface or interface state densities, which are closely related to the enhancement of the THz radiation.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume11
Issue number3
DOIs
Publication statusPublished - 2008 Jan 29

Fingerprint

Conjugated polymers
Semiconductor materials
Radiation
augmentation
polymers
radiation
Interface states
Surface states
Polymers
Electric fields
Modulation
Spectroscopy
wafers
modulation
microstructure
Microstructure
electric fields

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

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Enhancement of terahertz radiation in semiconductors induced by conjugated polymer. / Hwang, J. S.; Lin, H. C.; Huang, Y. C.; Lin, K. I.; Chang, J. W.; Guo, T. F.

In: Electrochemical and Solid-State Letters, Vol. 11, No. 3, 29.01.2008.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Hwang, J. S.

AU - Lin, H. C.

AU - Huang, Y. C.

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AU - Chang, J. W.

AU - Guo, T. F.

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