Enhancement of terahertz radiation in semiconductors induced by conjugated polymer

J. S. Hwang; H. C. Lin; Y. C. Huang; K. I. Lin; J. W. Chang; T. F. Guo

doi:10.1149/1.2827367

Enhancement of terahertz radiation in semiconductors induced by conjugated polymer

J. S. Hwang, H. C. Lin, Y. C. Huang, K. I. Lin, J. W. Chang, T. F. Guo

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Terahertz radiation (THz) from the surfaces of various semiconductor wafers and microstructures is studied. The intensities of THz radiation from the surfaces of certain semiconductors with a thin layer of conjugate polymer [2, 3-dibutoxy-1, 4-poly(phenylene vinylene)] deposited on their surfaces is greatly enhanced. The enhancement of THz radiation depends on the mechanism used to induct the THz radiation. Modulation spectroscopy of photoreflectance is employed to investigate the change in the built-in electric field and surface or interface state densities, which are closely related to the enhancement of the THz radiation.

Original language	English
Pages (from-to)	H63-H65
Journal	Electrochemical and Solid-State Letters
Volume	11
Issue number	3
DOIs	https://doi.org/10.1149/1.2827367
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.2827367

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abstract = "Terahertz radiation (THz) from the surfaces of various semiconductor wafers and microstructures is studied. The intensities of THz radiation from the surfaces of certain semiconductors with a thin layer of conjugate polymer [2, 3-dibutoxy-1, 4-poly(phenylene vinylene)] deposited on their surfaces is greatly enhanced. The enhancement of THz radiation depends on the mechanism used to induct the THz radiation. Modulation spectroscopy of photoreflectance is employed to investigate the change in the built-in electric field and surface or interface state densities, which are closely related to the enhancement of the THz radiation.",

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AU - Hwang, J. S.

AU - Lin, H. C.

AU - Huang, Y. C.

AU - Lin, K. I.

AU - Chang, J. W.

AU - Guo, T. F.

PY - 2008

Y1 - 2008

N2 - Terahertz radiation (THz) from the surfaces of various semiconductor wafers and microstructures is studied. The intensities of THz radiation from the surfaces of certain semiconductors with a thin layer of conjugate polymer [2, 3-dibutoxy-1, 4-poly(phenylene vinylene)] deposited on their surfaces is greatly enhanced. The enhancement of THz radiation depends on the mechanism used to induct the THz radiation. Modulation spectroscopy of photoreflectance is employed to investigate the change in the built-in electric field and surface or interface state densities, which are closely related to the enhancement of the THz radiation.

AB - Terahertz radiation (THz) from the surfaces of various semiconductor wafers and microstructures is studied. The intensities of THz radiation from the surfaces of certain semiconductors with a thin layer of conjugate polymer [2, 3-dibutoxy-1, 4-poly(phenylene vinylene)] deposited on their surfaces is greatly enhanced. The enhancement of THz radiation depends on the mechanism used to induct the THz radiation. Modulation spectroscopy of photoreflectance is employed to investigate the change in the built-in electric field and surface or interface state densities, which are closely related to the enhancement of the THz radiation.

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Enhancement of terahertz radiation in semiconductors induced by conjugated polymer

Abstract

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