Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers

C. C. Yang; J. K. Sheu; Xin Wei Liang; Min Shun Huang; M. L. Lee; K. H. Chang; S. J. Tu; Feng Wen Huang; W. C. Lai

doi:10.1063/1.3463469

Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers

C. C. Yang, J. K. Sheu, Xin Wei Liang, Min Shun Huang, M. L. Lee, K. H. Chang, S. J. Tu, Feng Wen Huang, W. C. Lai

Department of Photonics

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

InGaN/sapphire-based p-i-n type photovoltaic (PV) devices were shown to have A_l0.14 Ga_0.86N/ In_0.21 Ga_0.79 N heterostructures that enhance the extraction of photogenerated carriers from active layers. With an appropriately increased barrier height in AlGaN/InGaN absorption layers, PV devices exhibit lower RS despite the increase in conduction-band discontinuity compared with GaN/InGaN superlattice absorption layers. This improvement can be attributed to polarization-induced electric fields enhanced by the incorporated aluminum in barrier layers. The enhancement is beneficial to increase built-in electric fields. Subsequently, the photogenerated carriers can escape more easily from recombination or scattering centers. Under 1 sun air-mass 1.5 standard testing conditions, the A _l0.14 Ga_0.86 N/ In_0.21 Ga_0.79 N PV device exhibits high VOC (2.10 V) as well as an enhanced fill factor (0.66) and JSC (0.84 mA/ cm²) corresponding to a power conversion efficiency of 1.16%.

Original language	English
Article number	021113
Journal	Applied Physics Letters
Volume	97
Issue number	2
DOIs	https://doi.org/10.1063/1.3463469
Publication status	Published - 2010 Jul 12

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1063/1.3463469

Cite this

@article{6f321b2fba2d4dfe8b7c40fde0b9423d,

title = "Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers",

abstract = "InGaN/sapphire-based p-i-n type photovoltaic (PV) devices were shown to have Al0.14 Ga0.86N/ In0.21 Ga0.79 N heterostructures that enhance the extraction of photogenerated carriers from active layers. With an appropriately increased barrier height in AlGaN/InGaN absorption layers, PV devices exhibit lower RS despite the increase in conduction-band discontinuity compared with GaN/InGaN superlattice absorption layers. This improvement can be attributed to polarization-induced electric fields enhanced by the incorporated aluminum in barrier layers. The enhancement is beneficial to increase built-in electric fields. Subsequently, the photogenerated carriers can escape more easily from recombination or scattering centers. Under 1 sun air-mass 1.5 standard testing conditions, the A l0.14 Ga0.86 N/ In0.21 Ga0.79 N PV device exhibits high VOC (2.10 V) as well as an enhanced fill factor (0.66) and JSC (0.84 mA/ cm2) corresponding to a power conversion efficiency of 1.16%.",

author = "Yang, {C. C.} and Sheu, {J. K.} and Liang, {Xin Wei} and Huang, {Min Shun} and Lee, {M. L.} and Chang, {K. H.} and Tu, {S. J.} and Huang, {Feng Wen} and Lai, {W. C.}",

note = "Funding Information: The authors would like to acknowledge the National Science Council for the financial support of the research Grant Nos. NSC 97-2221-E-006-242-MY3 and 98-2221-E-218-005-MY3.",

year = "2010",

month = jul,

day = "12",

doi = "10.1063/1.3463469",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers

AU - Yang, C. C.

AU - Sheu, J. K.

AU - Liang, Xin Wei

AU - Huang, Min Shun

AU - Lee, M. L.

AU - Chang, K. H.

AU - Tu, S. J.

AU - Huang, Feng Wen

AU - Lai, W. C.

N1 - Funding Information: The authors would like to acknowledge the National Science Council for the financial support of the research Grant Nos. NSC 97-2221-E-006-242-MY3 and 98-2221-E-218-005-MY3.

PY - 2010/7/12

Y1 - 2010/7/12

N2 - InGaN/sapphire-based p-i-n type photovoltaic (PV) devices were shown to have Al0.14 Ga0.86N/ In0.21 Ga0.79 N heterostructures that enhance the extraction of photogenerated carriers from active layers. With an appropriately increased barrier height in AlGaN/InGaN absorption layers, PV devices exhibit lower RS despite the increase in conduction-band discontinuity compared with GaN/InGaN superlattice absorption layers. This improvement can be attributed to polarization-induced electric fields enhanced by the incorporated aluminum in barrier layers. The enhancement is beneficial to increase built-in electric fields. Subsequently, the photogenerated carriers can escape more easily from recombination or scattering centers. Under 1 sun air-mass 1.5 standard testing conditions, the A l0.14 Ga0.86 N/ In0.21 Ga0.79 N PV device exhibits high VOC (2.10 V) as well as an enhanced fill factor (0.66) and JSC (0.84 mA/ cm2) corresponding to a power conversion efficiency of 1.16%.

AB - InGaN/sapphire-based p-i-n type photovoltaic (PV) devices were shown to have Al0.14 Ga0.86N/ In0.21 Ga0.79 N heterostructures that enhance the extraction of photogenerated carriers from active layers. With an appropriately increased barrier height in AlGaN/InGaN absorption layers, PV devices exhibit lower RS despite the increase in conduction-band discontinuity compared with GaN/InGaN superlattice absorption layers. This improvement can be attributed to polarization-induced electric fields enhanced by the incorporated aluminum in barrier layers. The enhancement is beneficial to increase built-in electric fields. Subsequently, the photogenerated carriers can escape more easily from recombination or scattering centers. Under 1 sun air-mass 1.5 standard testing conditions, the A l0.14 Ga0.86 N/ In0.21 Ga0.79 N PV device exhibits high VOC (2.10 V) as well as an enhanced fill factor (0.66) and JSC (0.84 mA/ cm2) corresponding to a power conversion efficiency of 1.16%.

UR - http://www.scopus.com/inward/record.url?scp=77955152859&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955152859&partnerID=8YFLogxK

U2 - 10.1063/1.3463469

DO - 10.1063/1.3463469

M3 - Article

AN - SCOPUS:77955152859

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 021113

ER -

Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers

Abstract

All Science Journal Classification (ASJC) codes

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this