Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers

C. C. Yang, J. K. Sheu, Xin Wei Liang, Min Shun Huang, M. L. Lee, K. H. Chang, S. J. Tu, Feng Wen Huang, W. C. Lai

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

InGaN/sapphire-based p-i-n type photovoltaic (PV) devices were shown to have Al0.14 Ga0.86N/ In0.21 Ga0.79 N heterostructures that enhance the extraction of photogenerated carriers from active layers. With an appropriately increased barrier height in AlGaN/InGaN absorption layers, PV devices exhibit lower RS despite the increase in conduction-band discontinuity compared with GaN/InGaN superlattice absorption layers. This improvement can be attributed to polarization-induced electric fields enhanced by the incorporated aluminum in barrier layers. The enhancement is beneficial to increase built-in electric fields. Subsequently, the photogenerated carriers can escape more easily from recombination or scattering centers. Under 1 sun air-mass 1.5 standard testing conditions, the A l0.14 Ga0.86 N/ In0.21 Ga0.79 N PV device exhibits high VOC (2.10 V) as well as an enhanced fill factor (0.66) and JSC (0.84 mA/ cm2) corresponding to a power conversion efficiency of 1.16%.

Original languageEnglish
Article number021113
JournalApplied Physics Letters
Volume97
Issue number2
DOIs
Publication statusPublished - 2010 Jul 12

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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