Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure

Chien Chun Wang; Han Ku; Chien Chih Liu; Kwok Keung Chong; Chen I. Hung; Yeong Her Wang; Mau Phon Houng

doi:10.1063/1.2786015

Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure

Chien Chun Wang, Han Ku, Chien Chih Liu, Kwok Keung Chong, Chen I. Hung, Yeong Her Wang, Mau Phon Houng

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

A three-dimensional model with finite difference and time domain was established to investigate the enhancement of the light output intensity of GaN light-emitting diodes (LEDs) with bottom pillar (BP) structure. Through comparing the normalized light extraction intensity of GaN LEDs with or without BP in different dimensions, the theoretical results show that the light output intensity in the LED with BP structure involved could be enhanced by about 30%. The influence of BP structure on the light output intensity of a LED could be explained by the physical model of light interaction. In addition, the experimental results also show the same trend to the theoretical calculations.

Original language	English
Article number	121109
Journal	Applied Physics Letters
Volume	91
Issue number	12
DOIs	https://doi.org/10.1063/1.2786015
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2786015

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@article{18eaea56c7d74841809c336f1a04a977,

title = "Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure",

abstract = "A three-dimensional model with finite difference and time domain was established to investigate the enhancement of the light output intensity of GaN light-emitting diodes (LEDs) with bottom pillar (BP) structure. Through comparing the normalized light extraction intensity of GaN LEDs with or without BP in different dimensions, the theoretical results show that the light output intensity in the LED with BP structure involved could be enhanced by about 30%. The influence of BP structure on the light output intensity of a LED could be explained by the physical model of light interaction. In addition, the experimental results also show the same trend to the theoretical calculations.",

author = "Wang, {Chien Chun} and Han Ku and Liu, {Chien Chih} and Chong, {Kwok Keung} and Hung, {Chen I.} and Wang, {Yeong Her} and Houng, {Mau Phon}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan under Contract Nos. NSC-95-2221-E-006-353-, NSC-96-2221-E-006-082-MY2, and NSC-96-2221-E-232-001-. The authors are grateful to the National Center for High-Performance Computing for computer time and facilities and to Shi-Qing Chen, Jan-Dar Guo, and Wei-Chih Lai, Epitech Technology Corporation workers, for experimental assistance. ",

year = "2007",

doi = "10.1063/1.2786015",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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T1 - Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure

AU - Wang, Chien Chun

AU - Ku, Han

AU - Liu, Chien Chih

AU - Chong, Kwok Keung

AU - Hung, Chen I.

AU - Wang, Yeong Her

AU - Houng, Mau Phon

N1 - Funding Information: This work was supported by the National Science Council of Taiwan under Contract Nos. NSC-95-2221-E-006-353-, NSC-96-2221-E-006-082-MY2, and NSC-96-2221-E-232-001-. The authors are grateful to the National Center for High-Performance Computing for computer time and facilities and to Shi-Qing Chen, Jan-Dar Guo, and Wei-Chih Lai, Epitech Technology Corporation workers, for experimental assistance.

PY - 2007

Y1 - 2007

N2 - A three-dimensional model with finite difference and time domain was established to investigate the enhancement of the light output intensity of GaN light-emitting diodes (LEDs) with bottom pillar (BP) structure. Through comparing the normalized light extraction intensity of GaN LEDs with or without BP in different dimensions, the theoretical results show that the light output intensity in the LED with BP structure involved could be enhanced by about 30%. The influence of BP structure on the light output intensity of a LED could be explained by the physical model of light interaction. In addition, the experimental results also show the same trend to the theoretical calculations.

AB - A three-dimensional model with finite difference and time domain was established to investigate the enhancement of the light output intensity of GaN light-emitting diodes (LEDs) with bottom pillar (BP) structure. Through comparing the normalized light extraction intensity of GaN LEDs with or without BP in different dimensions, the theoretical results show that the light output intensity in the LED with BP structure involved could be enhanced by about 30%. The influence of BP structure on the light output intensity of a LED could be explained by the physical model of light interaction. In addition, the experimental results also show the same trend to the theoretical calculations.

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Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure

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All Science Journal Classification (ASJC) codes

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