Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure

Chien Chun Wang, Han Ku, Chien Chih Liu, Kwok Keung Chong, Chen I. Hung, Yeong-Her Wang, Mau-phon Houng

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

A three-dimensional model with finite difference and time domain was established to investigate the enhancement of the light output intensity of GaN light-emitting diodes (LEDs) with bottom pillar (BP) structure. Through comparing the normalized light extraction intensity of GaN LEDs with or without BP in different dimensions, the theoretical results show that the light output intensity in the LED with BP structure involved could be enhanced by about 30%. The influence of BP structure on the light output intensity of a LED could be explained by the physical model of light interaction. In addition, the experimental results also show the same trend to the theoretical calculations.

Original languageEnglish
Article number121109
JournalApplied Physics Letters
Volume91
Issue number12
DOIs
Publication statusPublished - 2007 Sep 28

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light emitting diodes
augmentation
output
three dimensional models
trends
interactions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Wang, Chien Chun ; Ku, Han ; Liu, Chien Chih ; Chong, Kwok Keung ; Hung, Chen I. ; Wang, Yeong-Her ; Houng, Mau-phon. / Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure. In: Applied Physics Letters. 2007 ; Vol. 91, No. 12.
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Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure. / Wang, Chien Chun; Ku, Han; Liu, Chien Chih; Chong, Kwok Keung; Hung, Chen I.; Wang, Yeong-Her; Houng, Mau-phon.

In: Applied Physics Letters, Vol. 91, No. 12, 121109, 28.09.2007.

Research output: Contribution to journalArticle

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