Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the Schottky contacts on AlGaN/GaN heterostructures

Chung Yu Lu; Edward Yi Chang; Jui Chien Huang; Chia Ta Chang; Mei Hsuan Lin; Ching Tung Lee

doi:10.1007/s11664-008-0384-9

Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the Schottky contacts on AlGaN/GaN heterostructures

Chung Yu Lu, Edward Yi Chang, Jui Chien Huang, Chia Ta Chang, Mei Hsuan Lin, Ching Tung Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Tungsten, stoichiometric W ₂N, and nitrogen-rich W ₂N films were used as Schottky contacts on AlGaN/GaN heterostructures. The nitrogen content in the film was controlled by varying the nitrogen-to-argon gas flow ratio during the reactive sputter deposition. The diode with the nitrogen-rich film exhibited a higher Schottky barrier height and the leakage current was comparable to that of the Ni/Au Schottky contact. Analysis suggested that this was due to the increase of the tungsten nitride work function as the result of higher nitrogen incorporation. Furthermore, after 600°C thermal annealing, the diode was stable and showed no change in the leakage current.

Original language	English
Pages (from-to)	624-627
Number of pages	4
Journal	Journal of Electronic Materials
Volume	37
Issue number	5
DOIs	https://doi.org/10.1007/s11664-008-0384-9
Publication status	Published - 2008 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-008-0384-9

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title = "Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the Schottky contacts on AlGaN/GaN heterostructures",

abstract = "Tungsten, stoichiometric W 2N, and nitrogen-rich W 2N films were used as Schottky contacts on AlGaN/GaN heterostructures. The nitrogen content in the film was controlled by varying the nitrogen-to-argon gas flow ratio during the reactive sputter deposition. The diode with the nitrogen-rich film exhibited a higher Schottky barrier height and the leakage current was comparable to that of the Ni/Au Schottky contact. Analysis suggested that this was due to the increase of the tungsten nitride work function as the result of higher nitrogen incorporation. Furthermore, after 600°C thermal annealing, the diode was stable and showed no change in the leakage current.",

author = "Lu, {Chung Yu} and Chang, {Edward Yi} and Huang, {Jui Chien} and Chang, {Chia Ta} and Lin, {Mei Hsuan} and Lee, {Ching Tung}",

note = "Funding Information: The authors would like to acknowledge the assistance and support from National Science Council, and the Ministry of Economic Affairs, Taiwan, R.O.C., under the Contracts: NSC 96-2752-E-009-001 and 95-EC-17-A-05-S1-020. The authors would also appreciate the measurement of the work function done by Ulvac Research Center, Taiwan.",

year = "2008",

month = may,

doi = "10.1007/s11664-008-0384-9",

language = "English",

volume = "37",

pages = "624--627",

journal = "Journal of Electronic Materials",

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T1 - Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the Schottky contacts on AlGaN/GaN heterostructures

AU - Lu, Chung Yu

AU - Chang, Edward Yi

AU - Huang, Jui Chien

AU - Chang, Chia Ta

AU - Lin, Mei Hsuan

AU - Lee, Ching Tung

N1 - Funding Information: The authors would like to acknowledge the assistance and support from National Science Council, and the Ministry of Economic Affairs, Taiwan, R.O.C., under the Contracts: NSC 96-2752-E-009-001 and 95-EC-17-A-05-S1-020. The authors would also appreciate the measurement of the work function done by Ulvac Research Center, Taiwan.

PY - 2008/5

Y1 - 2008/5

N2 - Tungsten, stoichiometric W 2N, and nitrogen-rich W 2N films were used as Schottky contacts on AlGaN/GaN heterostructures. The nitrogen content in the film was controlled by varying the nitrogen-to-argon gas flow ratio during the reactive sputter deposition. The diode with the nitrogen-rich film exhibited a higher Schottky barrier height and the leakage current was comparable to that of the Ni/Au Schottky contact. Analysis suggested that this was due to the increase of the tungsten nitride work function as the result of higher nitrogen incorporation. Furthermore, after 600°C thermal annealing, the diode was stable and showed no change in the leakage current.

AB - Tungsten, stoichiometric W 2N, and nitrogen-rich W 2N films were used as Schottky contacts on AlGaN/GaN heterostructures. The nitrogen content in the film was controlled by varying the nitrogen-to-argon gas flow ratio during the reactive sputter deposition. The diode with the nitrogen-rich film exhibited a higher Schottky barrier height and the leakage current was comparable to that of the Ni/Au Schottky contact. Analysis suggested that this was due to the increase of the tungsten nitride work function as the result of higher nitrogen incorporation. Furthermore, after 600°C thermal annealing, the diode was stable and showed no change in the leakage current.

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Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the Schottky contacts on AlGaN/GaN heterostructures

Abstract

All Science Journal Classification (ASJC) codes

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